Patents by Inventor Duk-Ho Hong
Duk-Ho Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240126890Abstract: An apparatus of verifying a software integrity of a vehicle controller and a method thereof includes a communication device that provides a communication interface with a software management system, and a controller which is configured to obtain first verification data of the vehicle controller from the software management system, obtains second verification data from the vehicle controller, and verifies an integrity of software loaded in the vehicle controller based on the obtained first verification data and the obtained second verification data.Type: ApplicationFiled: April 19, 2023Publication date: April 18, 2024Applicants: HYUNDAI MOTOR COMPANY, Kia CorporationInventors: Hye Ryun LEE, Kyung Tae NOH, Min Ho HEO, Sug Woo SHIN, Duk Won HONG, Dong Jun AHN
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Patent number: 7435673Abstract: Methods of forming metal interconnect structures include forming a first electrically insulating layer on a semiconductor substrate and forming a second electrically insulating layer on the first electrically insulating layer. The second and first electrically insulating layers are selectively etched in sequence to define a contact hole therein. A first metal layer (e.g., tungsten) is deposited. This first metal layer extends on the second electrically insulating layer and into the contact hole. The first metal layer is then patterned to expose the second electrically insulating layer. The second electrically insulating layer is selectively etched for a sufficient duration to expose the first electrically insulating layer and expose a metal plug within the contact hole. This selective etching step is performed using the patterned first metal layer as an etching mask. A seam within the exposed metal plug is then filled with an electrically conductive filler material (e.g., CoWP).Type: GrantFiled: September 28, 2005Date of Patent: October 14, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Kyoung Woo Lee, Ja-Hum Ku, Duk Ho Hong, Wan Jae Park
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Patent number: 7282451Abstract: Methods of forming metal interconnect layers include forming an electrically insulating layer having a contact hole therein, on a semiconductor substrate and then forming a recess in the electrically insulating layer, at a location adjacent the contact hole. The contact hole and the recess are then filled with a first electrically conductive material (e.g., tungsten (W)). At least a portion of the first electrically conductive material within the contact hole is then exposed. This exposure occurs by etching back a portion of the electrically insulating layer using the first electrically conductive material within the contact hole and within the recess as an etching mask. The first electrically conductive material within the recess is then removed to expose another portion of the electrically insulating layer. Following this, the exposed portion of the first electrically conductive material is covered with a second electrically conductive material (e.g.Type: GrantFiled: August 31, 2005Date of Patent: October 16, 2007Assignees: Samsung Electronics Co., Ltd., Infineon Technologies AGInventors: Duk Ho Hong, Kyoung Woo Lee, Markus Naujok, Roman Knoefler
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Patent number: 7166019Abstract: A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.Type: GrantFiled: January 27, 2005Date of Patent: January 23, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Moo-Yong Park, Ja-Eung Koo, Sang-Cheol Han, Duk-Ho Hong
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Publication number: 20060270228Abstract: A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.Type: ApplicationFiled: August 9, 2006Publication date: November 30, 2006Inventors: Hyo-Jong Lee, Jong-Won Lee, Duk-Ho Hong, Sang-Rok Hah, Hong-Seong Son, Jin-Sung Chung, Jae-Soo Ahn
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Patent number: 6976902Abstract: There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor.Type: GrantFiled: May 21, 2004Date of Patent: December 20, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Ja-Eung Koo, Jong-Won Lee, Sung-Bae Lee, Duk-Ho Hong, Sang-Rok Hah, Hong-Seong Son
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Publication number: 20050176354Abstract: A flexible membrane for a polishing head and a chemical mechanical polishing (CMP) apparatus having the same are provided. The flexible membrane for a polishing head includes a compressing plate having a first face and a second face opposite to the first face. The first face of the compressing plate holds a substrate with a vacuum provided thereto and compresses the substrate on a polishing pad. The second face of the compressing plate is combined with a supporter of the polishing head. The second face and the supporter define a space to which the vacuum for holding the substrate and a first pneumatic pressure for compressing the substrate are applied. A dividing member combined with the supporter is formed on the second face. The dividing member divides the space into at least two regions. A pneumatic pressure-introducing portion is formed at the dividing member. A second pneumatic pressure is provided to the compressing plate through the pneumatic pressure-introducing portion.Type: ApplicationFiled: January 27, 2005Publication date: August 11, 2005Inventors: Moo-Yong Park, Ja-Eung Koo, Sang-Cheol Han, Duk-Ho Hong
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Patent number: 6924234Abstract: In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.Type: GrantFiled: September 3, 2002Date of Patent: August 2, 2005Assignee: Samsung Electronics Co., Ltd.Inventors: Ja-Hyung Han, Sang-Rok Hah, Hong-Seong Son, Duk-Ho Hong, Byung-Lyul Park
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Publication number: 20050148292Abstract: In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.Type: ApplicationFiled: February 7, 2005Publication date: July 7, 2005Inventors: Ja-Hyung Hau, Sang-Rok Hah, Hong-Seong Son, Duk-Ho Hong, Byung-Lyul Park
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Publication number: 20050070090Abstract: A method of forming a metal pattern using a selective electroplating process is provided. First, a dielectric layer is formed on an underlying layer. Then, a trench defining blanket region is formed by patterning the dielectric layer. A diffusion barrier layer is conformally formed in the trench and on the blanket region. A polishing/plating stop layer and an upper seed layer are conformally formed on the diffusion barrier layer in a successive manner. The polishing/plating layer in the blanket region is exposed by selectively removing the upper seed layer in the blanket region, and, at the same time, a seed layer pattern remaining in the trenches is formed. An upper conductive layer is formed to fill the trench surrounded by the seed layer pattern using an electroplating process. Then, the dielectric layer in the blanket region is exposed by planarizing the upper conductive layer, the polishing/plating stop layer, the seed layer pattern, and the diffusion barrier layer.Type: ApplicationFiled: June 24, 2004Publication date: March 31, 2005Inventors: Hyo-Jong Lee, Jong-Won Lee, Duk-Ho Hong, Sang-Rok Hah, Hong-Seong Son, Jin-Sung Chung, Jae-Soo Ahn
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Publication number: 20050048875Abstract: There is provided a chemical mechanical polishing apparatus, which may include a polishing table rotated by a polishing table motor and having a pad thereon, a carrier head located above the polishing table to be rotatable by the driving of a carrier head motor and having a wafer located under the bottom thereof, a slurry supplier for supplying a slurry to the upper portion of the polishing table, a first polishing end point detector for detecting a polishing end point through the temperature change of the temperature sensor, at least one temperature sensor for detecting the temperature of a polishing region (the wafer, the pad, and the slurry), and a second polishing end point detector for detecting a polishing end point from the changes of load current, voltage, and resistance of the carrier head motor.Type: ApplicationFiled: May 21, 2004Publication date: March 3, 2005Inventors: Ja-Eung Koo, Jong-Won Lee, Sung-Bae Lee, Duk-Ho Hong, Sang-Rok Hah, Hong-Seong Son
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Publication number: 20030064587Abstract: In a method and apparatus for polishing a Cu metal layer and a method for forming Cu metal wiring, Cu oxide created by a surface oxidation of a Cu metal layer is removed from the wafer. The Cu metal layer, in which Cu oxide is removed, is polished. By polishing the Cu metal layer using the above method, process failures, such as scratches, caused by the presence of remnants of Cu oxide during subsequent polishing can be prevented.Type: ApplicationFiled: September 3, 2002Publication date: April 3, 2003Applicant: Samsung Electronics Co., Ltd.Inventors: Ja-Hyung Han, Sang-Rok Hah, Hong-Seong Son, Duk-Ho Hong, Byung-Lyul Park