Patents by Inventor Duk M. Yi

Duk M. Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5328860
    Abstract: A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surface of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.
    Type: Grant
    Filed: April 15, 1993
    Date of Patent: July 12, 1994
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong J. Lee, Duk M. Yi, Young O. Kim, Gyu C. Kim
  • Patent number: 5278084
    Abstract: A method for manufacturing BiCMOS semiconductor devices in which an oxide layer formed on the surf ace of a semiconductor substrate for the purpose of facilitating formation of spacers adjacent to sidewalls of the gates of the MOS transistors thereof is only partially removed, by using a dry etching process, to thereby leave a residual oxide layer, which is then removed, by using a wet etching process, to thereby form the spacers. Alternatively, all portions of the oxide layer except a portion thereof overlying the base-emitter region of the bipolar transistor of the BiCMOS device is removed, thereby precluding the necessity of etching the oxide layer away at the base-emitter junction. In either case, the DC forward current gain Hfe and linearity of the bipolar transistor of the BiCMOS device are enhanced.
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: January 11, 1994
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong J. Lee, Duk M. Yi, Young O. Kim, Gyu C. Kim