Patents by Inventor Duk-min Yi
Duk-min Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8067301Abstract: A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.Type: GrantFiled: January 22, 2010Date of Patent: November 29, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Duk-Min Yi, Sung-Keun Won, Jun-Yeoul You
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Patent number: 8017490Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.Type: GrantFiled: May 20, 2010Date of Patent: September 13, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Chae Kim, Duk-Min Yi, Sang-Il Jung, Jong-Wook Hong
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Patent number: 7994551Abstract: An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.Type: GrantFiled: September 7, 2007Date of Patent: August 9, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Won-je Park, Duk-min Yi
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Patent number: 7875488Abstract: A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.Type: GrantFiled: July 31, 2007Date of Patent: January 25, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Wook Hong, Tae-Seok Oh, Duk-Min Yi, Young-Mook Oh, Won-Je Park
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Publication number: 20100224588Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.Type: ApplicationFiled: May 20, 2010Publication date: September 9, 2010Inventors: Jong-Chae Kim, Duk-Min Yi, Sang-Il Jung, Jong-Wook Hong
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Patent number: 7749852Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.Type: GrantFiled: April 28, 2006Date of Patent: July 6, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Jong-Chae Kim, Duk-Min Yi, Sang-Il Jung, Jong-Wook Hong
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Publication number: 20100120190Abstract: A reliable image sensor and a method for forming the same are provided. The image sensor includes a photo-detective device. At least one transistor is electrically connected to the photo-detective device for outputting charges stored in the photo-detective device. A transistor directly connected to the photo-detective device includes a gate electrode pattern and an ion-implantation interrupting pattern arranged on the gate electrode pattern. Since the ion-implantation interrupting pattern is located on an upper portion of the gate electrode pattern of the transistor in the vicinity of the photo-detective device, a threshold voltage of the gate electrode pattern of the transistor in the vicinity of the photo-detective device is adjusted to a desired value.Type: ApplicationFiled: January 22, 2010Publication date: May 13, 2010Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Duk-Min YI, Sung-Keun WON, Jun-Yeoul YOU
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Patent number: 7652312Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.Type: GrantFiled: April 4, 2008Date of Patent: January 26, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Duk-Min Yi, Jong-Chae Kim, Jin-Hyeong Park
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Patent number: 7612392Abstract: Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.Type: GrantFiled: September 28, 2006Date of Patent: November 3, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Il Jung, Duk-Min Yi
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Publication number: 20080185621Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.Type: ApplicationFiled: April 4, 2008Publication date: August 7, 2008Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Duk-Min YI, Jong-Chae KIM, Jin-Hyeong PARK
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Patent number: 7378694Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.Type: GrantFiled: November 23, 2005Date of Patent: May 27, 2008Assignee: Samsung Electronics Co., Ltd.Inventors: Duk-Min Yi, Jong-Chae Kim, Jin-Hyeong Park
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Publication number: 20080087733Abstract: An image sensor according to an example embodiment may include a plurality of photoelectric transformation active regions, a plurality of read active regions, and/or at least one read gate. The plurality of photoelectric transformation active regions may be formed on a substrate. Each read active region may be formed adjacent to one of the plurality of photoelectric transformation active regions. Each read gate may be formed on one of the read active regions and partially overlap at least one of the adjacent photoelectric transformation active regions. Each read gate may be electrically isolated from the overlapping portion of the photoelectric transformation active region.Type: ApplicationFiled: September 7, 2007Publication date: April 17, 2008Inventors: Won-je Park, Duk-min Yi
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Publication number: 20080081396Abstract: A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens on the photoelectric conversion region and an etch stop layer pattern on a transistor region of the substrate. A metal interconnection structure may be formed on the inner lens and the etch stop layer pattern. Accordingly, the number of additional processes for fabricating an image sensor may be reduced.Type: ApplicationFiled: July 31, 2007Publication date: April 3, 2008Inventors: Jong-Wook Hong, Tae-Seok Oh, Duk-Min Yi, Young-Mook Oh, Won-Je Park
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Publication number: 20070262366Abstract: Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.Type: ApplicationFiled: July 24, 2007Publication date: November 15, 2007Applicant: SAMSUNG ELECTRONICS CO,. LTD.Inventors: Hyoun-Min Baek, Duk-Min Yi
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Patent number: 7262073Abstract: Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.Type: GrantFiled: August 22, 2005Date of Patent: August 28, 2007Assignee: Samsung Electronics Co., Ltd.Inventors: Hyoun-Min Baek, Duk-Min Yi
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Publication number: 20070075337Abstract: Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.Type: ApplicationFiled: September 28, 2006Publication date: April 5, 2007Inventors: Sang-Il Jung, Duk-Min Yi
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Publication number: 20070037405Abstract: Methods of forming a dielectric layer of a MIM capacitor can include forming a passivation layer on a dielectric layer of a MIM capacitor to separate the dielectric layer from direct contact with an overlying photo-resist pattern. Related capacitor structures are also disclosed.Type: ApplicationFiled: April 28, 2006Publication date: February 15, 2007Inventors: Jong-Chae Kim, Duk-Min Yi, Sang-Il Jung, Jong-Wook Hong
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Patent number: 7078775Abstract: A mesh-shaped gate electrode is located over a surface of a substrate. The mesh-shaped gate electrode includes a plurality of first elongate wirings extending parallel to one another, and a plurality of second elongate wirings extending parallel to one another. The first elongate wirings intersect the second elongate wirings to define an array of gate intersection regions over the surface of the substrate and to further define an array of source/drain regions of the substrate. To reduce gate capacitance, at least one oxide region may be located in the substrate below the mesh-shaped gate electrode. For example, an array of oxide regions may be respectively located below the array of gate intersection regions.Type: GrantFiled: March 11, 2004Date of Patent: July 18, 2006Assignee: Samsung Electronics Co., Ltd.Inventors: Duk-min Yi, Han-su Oh, Chul-ho Chung
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Publication number: 20060108614Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.Type: ApplicationFiled: November 23, 2005Publication date: May 25, 2006Inventors: Duk-Min Yi, Jong-Chae Kim, Jin-Hyeong Park
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Publication number: 20060054946Abstract: Disclosed are a complementary metal oxide semiconductor (CMOS) image sensor and a method of forming the same. The CMOS image sensor comprises a semiconductor substrate having a photodiode region and a transistor region. An optical path is formed between a micro lens on the photodiode region and a photodiode formed on the semiconductor substrate. The optical path comprises an inner lens formed between an intermetal insulation layer on the photodiode region and a transparent optical region formed on the inner lens. The transparent optical region generally has a different refractive index from the inner lens.Type: ApplicationFiled: August 22, 2005Publication date: March 16, 2006Inventors: Hyoun-Min Baek, Duk-Min Yi