Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: Disclosed herein is a surround camera system for autonomous driving. The surround camera system includes: at least one forward surveillance camera configured to monitor a region in front of a vehicle; at least one backward surveillance camera configured to monitor a region behind the vehicle; one or more side surveillance cameras configured to monitor both sides alongside the vehicle; a monitoring means configured to display each of acquired images; and a video control unit configured to process the images acquired via the forward surveillance camera, the backward surveillance camera, and the side surveillance camera, to transmit the processed images to the monitoring means, to detect a target object from the acquired images, analyze the target object, and issue a warning to a driver, and to control the electronic control unit of the vehicle; wherein a 360-degree omnidirectional region around the vehicle is monitored.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: A locking module of a wire auto-winding device includes a first case having a coupling projection formed thereon; a rotating piece inserted over the coupling projection of the first case in order to be rotated clockwise or counterclockwise; a button member coupled to the rotating piece and being slid in a first direction to rotate the rotating piece by means of a button operation; a stopper member coupled to the rotating piece to be slid in a second direction by means of the rotation of the rotating piece; a resilient spring for pushing and returning one of the button member or the stopper member in the opposite direction; and a second case fastened to the first case to form a component receiving space therein.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: The present disclosure relates to an ?-aminoamide derivative compound and a pharmaceutical composition containing the same. According to various embodiments of the present disclosure, provided is a therapeutic agent which can overcome the disadvantages of existing drugs used as a MAO-B inhibitor and, specifically, reversibly inhibits MAO-B through a non-covalent bond so as to alleviate or eliminate the side effects of the existing drugs which exhibit a therapeutic effect by irreversibly acting via a covalent bond with MAO-B. Particularly, a new compound having superior stability and efficacy compared to the existing reversible MAO-B inhibitors may be provided.

Abstract: A slat control system for an aircraft may include a flight control computer configured to generate a gap command in response to an occurrence of a gap-command condition. The slat control system may further include an edge control system including an edge control device having a plurality of control device positions including at least one designated control device position. The slat control system may additionally include a device actuation system configured to move a leading edge device of an aircraft. The edge control system may be configured to automatically command the device actuation system to extend the leading edge device from a sealed position to a gapped position when the edge control device is in the designated control device position and the gap command is received by the edge control system.

Abstract: An electrolyte includes an eutectic mixture composed of (a) a hetero cyclic compound having a predetermined chemistry figure, and (b) an ionizable lithium salt. An electrochemical device having the electrolyte. The eutectic mixture included in the electrolyte exhibits inherent characteristics of an eutectic mixture such as excellent thermal stability and excellent chemical stability, thereby improving the problems such as evaporation, ignition and side reaction of an electrolyte caused by the usage of existing organic solvents.

Abstract: There is provided a semiconductor device capable of enhancing device performance by variably adjusting threshold voltage of a transistor having gate-all-around structure.

Abstract: The preset invention relates to a solid oxide fuel cell stack capable of producing electricity, in which unit cell modules are connected in series and in parallel, and to a manufacturing method thereof. The solid oxide fuel cell stack is manufactured by: making a unit cell module comprising at least one unit cell formed on the outer surfaces of a flat tubular support, a first electrical interconnector formed on the front end of the support and at least a portion of the outer surfaces so as to be connected to a first electrode of the unit cell, and a second electrical interconnector formed on the rear end of the support and at least a portion of the outer surfaces so as to be connected to a second electrode of the unit cell; and stacking the unit cell modules such that the electrical interconnectors come into contact with each other.

Abstract: The present invention relates to a manufacturing method for softgel capsule containing solid and liquid formulations as core ingredient, wherein at least one pharmaceutical drug can be included in both solid formulation and liquid formulation. More particularly, this invention relates to a softgel capsule wherein liquid formulation, for example, solution and/or suspension as well as solid formulation, for example, tablet, pellet and/or sustained release dosage are present as core ingredient and its manufacturing method.

Abstract: An integrated single body compact welder comprises a single unit constructed as one body in a centralized arrangement, a body portion mounting the single unit therein, an handle portion integrated to the body portion and a welding rod holder mounted on a support portion which is fixed to the body portion, in which the body portion comprises a heat sink, a power input/output circuit portion including a rectifying portion and an inverter circuit constituted by mounting parts on a first print circuit board positioned on the lower surface of the heat sink; and a system operating control portion including a system direct current supply portion and a control portion including a pulse width modulation circuit for controlling a system output power, which are constituted by mounting parts on a second print circuit board positioned on the upper surface of the heat sink.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: Disclosed are an apparatus and method for detecting an abnormal connection. The apparatus for detecting an abnormal connection includes a log pattern identifier configured to identify a plurality of connection patterns each indicating connection stages from log data regarding a system connection; and a log analyzer configured to perform at least one of a first log analysis for detecting an abnormal connection stage pair indicated by a specific connection pattern among the plurality of connection patterns and a second log analysis for detecting an abnormal connection pattern indicating a specific connection stage pair among the plurality of connection patterns.

Abstract: In a method for fabricating a semiconductor device, a first gate electrode and a second gate electrode are provided on a substrate, the first gate electrode and the second gate electrode being formed in a first region and a second region of the substrate, respectively. A conductive buffer layer is formed along sidewalls of the first gate electrode and the second gate electrode and on upper surfaces of the first gate electrode and second gate electrode. A first mask pattern covering the first region of the substrate on the buffer layer is formed. A first impurity region is formed in the substrate at sides of the second gate electrode using the first mask pattern as a mask of an ion implantation process.

Abstract: In a method of manufacturing a semiconductor device, a dummy gate structure including a dummy gate insulation layer pattern, a dummy gate electrode and a gate mask sequentially stacked are formed on a substrate. An interlayer insulating layer including tonen silazane (TOSZ) is formed on the substrate to cover the dummy gate structure. An upper portion of the interlayer insulating layer is planarized until a top surface of the gate mask is exposed to form an interlayer insulating layer pattern. The exposed gate mask, and the dummy gate electrode and the dummy gate insulation layer pattern under the gate mask are removed to form an opening exposing a top surface of the substrate. The dummy gate insulation layer pattern is removed using an etchant including hydrogen fluoride (HF), but the interlayer insulating layer pattern remains. A gate structure is formed to fill the opening.

Abstract: This invention provides smart and convenient Bluetooth enabled and other wireless enabled device connection with car and other type of vehicles with Bluetooth connection feature. A method is recognizing and sensing the presence of Bluetooth enabled mobile devices with other conditions, such as presence of owner in a car, sensing the movement of a mobile device, and door open-close status, and then connect and disconnect intelligently between wirelessly connected mobile devices and said a car kit. For example, Bluetooth profiles, such as HFP, HSP, HID, A2DP, AVRCP, AVDTP, AVCTP, GAVDP, PBAP, PBA, PXP, VDP, SYNCH, and other connection oriented Bluetooth and Bluetooth Low Energy profiles, can utilize the method for convenience and intelligent connection and disconnection.

Abstract: The present invention relates to a polymer blend composition comprising a dielectric elastomer, an actuator film manufactured using the same, and an actuator comprising the film. The polymer blend composition according to the present invention comprises a block copolymer having excellent compatibility with the dielectric elastomer and excellent dielectric properties, and thus displacement values suitable for the purpose can be obtained by a simple method of adjusting a composition of the polymer blend. Moreover, the film manufactured using the same has high dielectric constant, low dielectric loss and high electromechanical displacement, and thus the film exhibits excellent dielectric properties when it is applied in a dielectric layer for an actuator.

Abstract: A secondary battery comprising a cathode, an anode, a separator and an electrolyte that comprises a eutectic mixture formed of: an amide group-containing compound, and an ionizable lithium salt. The anode comprises a metal or metal oxide having a potential vs. lithium potential (Li/Li+) within electrochemical window of the eutectic mixture. Because the secondary battery uses a eutectic mixture as an electrolyte in combination with an anode having a potential vs. lithium potential (Li/Li+) within the electrochemical window of the eutectic mixture, problems such as decomposition of an electrolyte and degradation of the quality of a battery are avoided. Also, due to the thermal and chemical stability, high conductivity and a broad electrochemical window of a eutectic mixture, it is possible to improve the quality as well as safety of a battery.

Abstract: Provided is an apparatus for determining whether to change resources using pattern information. The apparatus includes a reception unit which receives resource information which is information about an amount of resources used of a plurality of servers which exist in a data center which provides resources to a user, a basic data generation unit which generates basic data about predetermined items in preset time units using the resource information, a pattern information generation unit which generates pattern information using the basic data, and a resource change determination unit which determines whether to increase, maintain, or reduce the resources using the generated pattern information.