Abstract: A fuse latch of a semiconductor device is disclosed. The fuse latch of the semiconductor device includes a plurality of PMOS transistors and a plurality of NMOS transistors. The fuse latch includes PMOS transistors and NMOS transistors configured to latch fuse cell data. In the fuse latch, the plurality of PMOS transistors and the plurality of NMOS transistors are arranged in a shape of two lines in each active region in a second direction.

Abstract: A fuse latch of a semiconductor device is disclosed. The fuse latch of the semiconductor device includes a plurality of PMOS transistors and a plurality of NMOS transistors. The fuse latch includes PMOS transistors and NMOS transistors configured to latch fuse cell data. In the fuse latch, the plurality of PMOS transistors and the plurality of NMOS transistors are arranged in a shape of two lines in each active region in a second direction.

Abstract: A fuse latch of a semiconductor device is disclosed. The fuse latch includes a plurality of PMOS transistors and a plurality of NMOS transistors to latch fuse cell data. In the fuse latch, the PMOS transistors are formed in a single P-type active region, and the NMOS transistors are arranged in a two-stage structure at one side of the P-type active region.

Abstract: A fuse latch of a semiconductor device is disclosed. The fuse latch includes a plurality of PMOS transistors and a plurality of NMOS transistors to latch fuse cell data. In the fuse latch, the PMOS transistors are formed in a single P-type active region, and the NMOS transistors are arranged in a two-stage structure at one side of the P-type active region.

Abstract: A semiconductor memory device may be disclosed. The semiconductor memory device may include a first memory cell array region and a second memory cell array region, each of which includes memory cells. The semiconductor memory device may include a column driving (Y-HOLE) region disposed between the first memory cell array region and the second memory cell array region. The Y-HOLE region may include an error correction code (ECC) block configured for performing error correction.

Abstract: A semiconductor memory device may be disclosed. The semiconductor memory device may include a first memory cell array region and a second memory cell array region, each of which includes memory cells. The semiconductor memory device may include a column driving (Y-HOLE) region disposed between the first memory cell array region and the second memory cell array region. The Y-HOLE region may include an error correction code (ECC) block configured for performing error correction.

Abstract: A semiconductor memory device having dummy word lines is disclosed. In the semiconductor memory device, a number of dummy word lines are arranged at both ends of a cell mat.

Abstract: A semiconductor device may be provided. The semiconductor device may include a first power line located in a memory cell array region. The semiconductor device may include a second power line located in a column decoder region. The semiconductor device may include a third power line formed in a layer different from the first power line and the second power line, configured to couple the first power line to the second power line. The semiconductor device may include a metal-oxide-semiconductor (MOS) capacitor located below the third power line.

Abstract: A semiconductor device may be provided. The semiconductor device may include a first power line located in a memory cell array region. The semiconductor device may include a second power line located in a column decoder region. The semiconductor device may include a third power line formed in a layer different from the first power line and the second power line, configured to couple the first power line to the second power line. The semiconductor device may include a metal-oxide-semiconductor (MOS) capacitor located below the third power line.

Abstract: Disclosed is a semiconductor device including a plurality of conductive patterns formed on a semiconductor substrate while being spaced apart from one another at a preset interval and extending in a first direction, and a plurality of junction areas formed by doping impurities in the semiconductor substrate and provided between the conductive patterns. The plurality of junction areas includes transistor junction areas and dummy junction areas. Each of the transistor junction areas is connected through a contact to a source/drain electrode, and the contact is formed at a higher level than the transistor junction areas. Each of the dummy junction areas is connected to a bias contact formed at higher level than the dummy junction areas. A well bias voltage is applied to the dummy junction areas through the bias contact.

Abstract: A bit line equalizer includes a first line-shaped gate extended in a first direction, a second line-shaped gate spaced apart from the first line-shaped gate by a predetermined distance and extending parallel to the first gate, a third gate configured to interconnect the first gate and the second gate, a first contact node located at one side of the first gate, a second contact node located at one side of the second gate, a third contact node located between the first gate and the second gate and located at one side of the third gate, and a fourth contact node located between the first gate and the second gate and located at the other side of the third gate.

Abstract: A memory device may be provided. The memory device may include a plurality of channel areas including a plurality of cell array areas. The memory device may include power interconnections and capacitor areas extended between the plurality of cell array areas in the plurality of channel areas.

Abstract: A bit line equalizer includes a first line-shaped gate extended in a first direction, a second line-shaped gate spaced apart from the first line-shaped gate by a predetermined distance and extending parallel to the first gate, a third gate configured to interconnect the first gate and the second gate, a first contact node located at one side of the first gate, a second contact node located at one side of the second gate, a third contact node located between the first gate and the second gate and located at one side of the third gate, and a fourth contact node located between the first gate and the second gate and located at the other side of the third gate.

Abstract: Disclosed is a semiconductor device including a plurality of conductive patterns formed on a semiconductor substrate while being spaced apart from one another at a preset interval and extending in a first direction, and a plurality of junction areas formed by doping impurities in the semiconductor substrate and provided between the conductive patterns. The plurality of junction areas includes transistor junction areas and dummy junction areas. Each of the transistor junction areas is connected through a contact to a source/drain electrode, and the contact is formed at a higher level than the transistor junction areas. Each of the dummy junction areas is connected to a bias contact formed at higher level than the dummy junction areas. A well bias voltage is applied to the dummy junction areas through the bias contact.

Abstract: A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.

Abstract: A semiconductor apparatus includes a first junction region formed over an active region; a gate region formed over the active region to substantially surround the first junction region; a second junction region formed over the active region outside the gate region on a first side of the first junction region; and a third junction region formed over the active region outside the gate region on a second side of the first junction region which is opposite to the first side, wherein the second junction region and the third junction region are disposed such that the gate region exists between the second junction region and the third junction region.

Abstract: A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.

Abstract: A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.

Abstract: Various embodiments of a control circuit for controlling an address output timing of a semiconductor device are disclosed. In one exemplary embodiment, the circuit may include: a timing signal generation unit configured to decode operation specification information of a semiconductor device and generate a timing signal by delaying a read command or a write command based on a decoding result of the operation specification information; a storage control signal generation unit configured to generate a storage control signal in response to the read command or the write command; an output control signal generation unit configured to generate an output control signal in response to the timing signal; and a storage/output unit configured to store an address in response to the storage control signal, and output the stored address as a timing-adjusted address in response to the output control signal.

Abstract: A semiconductor integrated circuit device includes a first signal line and a second signal line, and a sense amplifier that includes a plurality of PMOS transistors and a plurality of NMOS transistors. The sense amplifier is configured to sense amplify a potential difference between the first signal line and the second signal line. The junction regions of the NMOS and PMOS transistors having the same conductivity type, and to which the same signal is applied, are formed in one integrated active region.