Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: The present disclosure relates to a quantum dot film including a self-assembled block copolymer, and a quantum dot bonded to the block copolymer, wherein the film has pores with an average diameter of 100-3000 nm inside.

Abstract: The present disclosure provides a quantum dot (QD) light emitting diode including: a first electrode; a second electrode facing the first electrode; a QD emitting material layer positioned between the first electrode and the second electrode and including a QD and an organic material; a hole auxiliary layer positioned between the first electrode and the QD emitting material layer; and an electron auxiliary layer positioned between the QD emitting material layer and the second electrode, wherein the organic material has a highest occupied molecular orbital (HOMO) level higher than a material of the hole auxiliary layer.

Abstract: The present invention relates to a quantum dot containing a metastable phase which contains at least partly a crystal structure at quantum dot synthesis temperature at room temperature.

Abstract: The present disclosure relates to a quantum dot film including a self-assembled block copolymer, and a quantum dot bonded to the block copolymer, wherein the film has pores with an average diameter of 100-3000 nm inside.

Abstract: Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

Abstract: Embodiments relate to a quantum rod, a quantum rod film, a quantum rod display device with a quantum rod. The quantum rod includes a first core, a second core separated from the first core, and a first shell surrounding the first and second cores.

Abstract: A phosphor represented by Formula 1: ZnS:Cu,Cl,Mn,Te.

Abstract: The present invention is directed to phosphors and white light emitting diodes and a method for preparing a Ce3+ doped calcium silicate phosphor represented by a chemical formula of (Ca1-yMy)2-x-zSiO4:Ce3+x,N+z, wherein x is 0<x?0.5, y is 0?y?0.5, z is 0<z?0.5, M is at least one metal selected from Mg, Sr and Ba, and N is at least one metal selected from Li, Na, K and Rb, as well as white LEDs produced comprising the same. The phosphor of the present invention can be excited using conventional InGaN-based blue light emitting diodes, as well as GaN-based near-UV light emitting diodes to emit light across the visible spectrum.

Abstract: Disclosed herein is a polymer substrate for a flexible display, comprising a reticular superelastic alloy structure and/or an annular superelastic alloy structure therein. The polymer substrate has an improved flexibility because the superelastic alloy structure is embedded therein.

Abstract: The present invention relates to a phosphor and a white LED, more particularly, to a method for fabricating a yellow emitting Ce3+-activated silicate phosphor with a new composition represented as (Sr1-y-zMyNz)3-xSiO5:Ce3+x, (0<x?0.3, M includes at least one selected from alkaline earth metals on the periodic table, 0?y?1, N is at least one selected from alkali metals on the periodic table and 0?z?0.3) and a preparation method thereof and an LED using the same. The phosphor according to the present invention shows a broad band emission when it is excited by the existing InGaN-based blue LED and GaN-based ultraviolet LED with long wavelength. The LED using the phosphor according to the present invention has a broad emission with a wide spectral range and good color purity and very high light emitting efficiency when is applied to a LED and a backlight source of a liquid crystal display.

Abstract: A phosphor represented by Formula 1: ZnS:Cu,Cl,Mn,Te.

Abstract: The present invention relates to a phosphor having excellent emission brightness by inclusion of Si or Fe in the phosphor having a TbAG:Ce composition, and a white LED. The white photoluminescent device in accordance with the present invention comprises at least one light-emitting diode emitting light with a wavelength of 430 to 470 nm and a phosphor having a composition of TbAG:Ce, wherein the phosphor having a composition of TbAG:Ce is composed of a compositional formula of (Tb1-xCex)3(Al1-yMy)5O12, wherein x is between 0.01 and 0.4, y is between 0.0 and 0.1, and M is selected from the group consisting of Si and Fe.

Abstract: The present invention is directed to phosphors and white light emitting diodes and a method for preparing a Ce3+ doped calcium silicate phosphor represented by a chemical formula of (Ca1-yMy)2-x-zSiO4:Ce3+x,N+z, wherein x is 0<x?0.5, y is 0?y?0.5, z is 0<z?0.5, M is at least one metal selected from Mg, Sr and Ba, and N is at least one metal selected from Li, Na, K and Rb, as well as white LEDs produced comprising the same. The phosphor of the present invention can be excited using conventional InGaN-based blue light emitting diodes, as well as GaN-based near-UV light emitting diodes to emit light across the visible spectrum.

Abstract: The present invention relates to a phosphor having excellent emission brightness by inclusion of Si or Fe in the phosphor having a TbAG:Ce composition, and a white LED. The white photoluminescent device in accordance with the present invention comprises at least one light-emitting diode emitting light with a wavelength of 430 to 470 nm and a phosphor having a composition of TbAG:Ce, wherein the phosphor having a composition of TbAG:Ce is composed of a compositional formula of (Tb1-xCex)3 (Al1-yMy)5O12, wherein x is between 0.01 and 0.4, y is between 0.0 and 0.1, and M is selected from the group consisting of Si and Fe.

Abstract: The present invention relates to a phosphor and a white LED, more particularly, to a method for fabricating a yellow emitting Ce3+-activated silicate phosphor with a new composition represented as (Sr1-y-zMyNz)3-xSiO5:Ce3+x, (0<x?0.3, M includes at least one selected from alkaline earth metals on the periodic table, 0?y?1, N is at least one selected from alkali metals on the periodic table and 0?z?0.3) and a preparation method thereof and an LED using the same. The phosphor according to the present invention shows a broad band emission when it is excited by the existing InGaN-based blue LED and GaN-based ultraviolet LED with long wavelength. The LED using the phosphor according to the present invention has a broad emission with a wide spectral range and good color purity and very high light emitting efficiency when is applied to a LED and a backlight source of a liquid crystal display.

Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected.

Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect i s exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected.