Abstract: A silicon carbide (SiC) static induction transistor (SIT) includes a source, a gate disposed over the source and receiving a control signal, a drain disposed over the recessed gate and generating an output signal, an epitaxial pattern disposed between the source and the drain and including a protruding portion, and a gate bus electrically coupled to the gate and including carbon. A method of forming an SiC SIT transistor device includes providing a substrate including a source doped with dopants of a first conductivity type, forming an epitaxial pattern including a protruding portion over the source, forming a recessed gate over the source, forming a gate bus over the recessed gate, forming a drain over the gate bus and the epitaxial pattern, and forming a first heatsink over the drain.

Abstract: This disclosure relates to semiconductor devices, and, more particularly, to a semiconductor structure that improves the switching speed of a switch for which the turn-off process depends on the recombination speed of charge carriers. The disclosure describes a semiconductor device formed on a semiconductor substrate that includes a power semiconductor switch having a drift region in the semiconductor substrate, an Extraction Plug in electrical contact with the drift region of the power semiconductor switch, and an extraction device electrically coupled to the Extraction Plug. The extraction device is structured to remove charge carriers from the drift region through the Extraction Plug when the extraction device is turned on. Methods are also described.

Abstract: This disclosure relates to semiconductor devices, and, more particularly, to a semiconductor structure that improves the switching speed of a switch for which the turn-off process depends on the recombination speed of charge carriers. The disclosure describes a semiconductor device formed on a semiconductor substrate that includes a power semiconductor switch having a drift region in the semiconductor substrate, an Extraction Plug in electrical contact with the drift region of the power semiconductor switch, and an extraction device electrically coupled to the Extraction Plug. The extraction device is structured to remove charge carriers from the drift region through the Extraction Plug when the extraction device is turned on. Methods are also described.

Abstract: A Freewheeling Diode of any kind (Fast Recovery Diode, Schottky Barrier Diode or other variants) is integrated with a Forced Extraction Device and in this way two entirely different functions—the Free-Wheeling function and the Forced Extraction function are combined in one device, simplifying the circuit and reducing the number of components. The FWD part of the integrated device is standard in the industry, but the Forced Extraction Device is made using a lateral or vertical PMOS with a votage capability between a control input and the output terminals that is as high or higher than the rating voltage of the Main Switch that will be used together with the FWD.

Abstract: This disclosure relates to semiconductor devices, and, more particularly, to a semiconductor structure that improves the switching speed of a switch for which the turn-off process depends on the recombination speed of charge carriers. The disclosure describes a semiconductor device formed on a semiconductor substrate that includes a power semiconductor switch having a drift region in the semiconductor substrate, an Extraction Plug in electrical contact with the drift region of the power semiconductor switch, and an extraction device electrically coupled to the Extraction Plug. The extraction device is structured to remove charge carriers from the drift region through the Extraction Plug when the extraction device is turned on. Methods are also described.

Abstract: A Freewheeling Diode of any kind (Fast Recovery Diode, Schottky Barrier Diode or other variants) is integrated with a Forced Extraction Device and in this way two entirely different functions—the Free-Wheeling function and the Forced Extraction function are combined in one device, simplifying the circuit and reducing the number of components. The FWD part of the integrated device is standard in the industry, but the Forced Extraction Device is made using a lateral or vertical PMOS with a voltage capability between a control input and the output terminals that is as high or higher than the rating voltage of the Main Switch that will be used together with the FWD.