Abstract: A device structure according to the present disclosure may include a first die having a first substrate and a first interconnect structure, a second die having a second substrate and a second interconnect structure, and a third die having a third interconnect structure and a third substrate. The first interconnect structure is bonded to the second substrate via a first plurality of bonding layers. The second interconnect structure is bonded to the third interconnect structure via a second plurality of bonding layers. The third substrate includes a plurality of photodiodes and a first transistor. The second die includes a second transistor having a source connected to a drain of the first transistor, a third transistor having a gate connected to drain of the first transistor and the source of the second transistor, and a fourth transistor having a drain connected to the source of the third transistor.

Abstract: A backside illuminated image sensor includes a semiconductor substrate having a front side and backside, a sensor element formed overlying the frontside of the semiconductor substrate, and a capacitor formed overlying the sensor element.

Abstract: Provided is a method of fabricating a backside illuminated image sensor that includes providing a device substrate having a frontside and a backside, where pixels are formed at the frontside and an interconnect structure is formed over pixels, forming a re-distribution layer (RDL) over the interconnect structure, bonding a first glass substrate to the RDL, thinning and processing the device substrate from the backside, bonding a second glass substrate to the backside, removing the first glass substrate, and reusing the first glass substrate for fabricating another backside-illuminated image sensor.

Abstract: An image sensor optoelectronic product and a method for fabrication thereof comprise a photodiode region overlapping a source/drain region of the same polarity within a reset metal oxide semiconductor field effect transistor device. The image sensor optoelectronic product also comprises a bridging implant region of the same polarity as the photodiode region and the source/drain region. The bridging implant region overlaps the photodiode region, encompasses the source/drain region and extends laterally into the channel region of the reset metal oxide semiconductor field effect transistor device. The bridging implant region provides the image sensor optoelectronic product with attenuated leakage and attenuated white pixel cell susceptibility.