Patents by Inventor Duncan Allsopp

Duncan Allsopp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrates for semiconductor devices
    Patent number: 10023974
    Abstract: A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ?Tec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: July 17, 2018
    Inventors: Timothy Mollart, Quanzhong Jiang, Michael John Edwards, Duncan Allsopp, Christopher Rhys Bowen, Wang Nang Wang
  • SUBSTRATES FOR SEMICONDUCTOR DEVICES
    Publication number: 20160186362
    Abstract: A method of fabricating a composite semiconductor component comprising: (i) providing a bowed substrate comprising a wafer of synthetic diamond material having a thickness td, the bowed substrate being bowed by an amount B and comprising a convex face and a concave face; (ii) growing a layer of compound semiconductor material on the convex face of the bowed substrate via a chemical vapour deposition technique at a growth temperature T to form a bowed composite semiconductor component comprising the layer of compound semiconductor material of thickness tsc on the convex face of the bowed substrate, the compound semiconductor material having a higher average thermal expansion coefficient than the synthetic diamond material between the growth temperature T and room temperature providing a thermal expansion mismatch ?Tec; and (iii) cooling the bowed composite semiconductor component, wherein the layer of compound semiconductor material contracts more than the wafer of synthetic diamond material during cooling due
    Type: Application
    Filed: December 4, 2013
    Publication date: June 30, 2016
    Inventors: Timothy Mollart, Quanzhong Jiang, Michael John Edwards, Duncan Allsopp, Christopher Rhys Bowen, Wang Nang Wang