Patents by Inventor Duncan C. Collier

Duncan C. Collier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9773727
    Abstract: A multi-layer full dense mesh (MFDM) device. The MFDM may include a metal-top layer including a bump pad array that may include a power1 (PWR1) bump pad within a PWR1 bump region, a VSS bump pad within a VSS bump region, and a power2 (PWR2) bump pad within a PWR2 bump region. The metal-top layer may also include a PWR1 majority metal-top region. The MFDM may also include a metal-top-1 layer beneath the metal-top layer and including a VSS majority metal-top-1 region, a PWR1 metal-top-1 region, and a PWR2 metal-top-1 region. The MFDM may also include a metal-top-2 layer beneath the metal-top-1 layer and including a PWR2 majority metal-top-2 region, a VSS metal-top-2 region, and a PWR1 metal-top-2 region. The MFDM may also include top-1 VIAs disposed between the metal-top layer and the metal-top-1 layer, and top-2 VIAs disposed between the metal-top-1 layer and the metal-top-2 layer.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: September 26, 2017
    Assignee: Oracle International Corporation
    Inventors: Duncan C. Collier, Robert P. Masleid, Aparna Ramachandran, King Yen
  • Publication number: 20170092579
    Abstract: A multi-layer full dense mesh (MFDM) device. The MFDM may include a metal-top layer including a bump pad array that may include a power1 (PWR1) bump pad within a PWR1 bump region, a VSS bump pad within a VSS bump region, and a power2 (PWR2) bump pad within a PWR2 bump region. The metal-top layer may also include a PWR1 majority metal-top region. The MFDM may also include a metal-top-1 layer beneath the metal-top layer and including a VSS majority metal-top-1 region, a PWR1 metal-top-1 region, and a PWR2 metal-top-1 region. The MFDM may also include a metal-top-2 layer beneath the metal-top-1 layer and including a PWR2 majority metal-top-2 region, a VSS metal-top-2 region, and a PWR1 metal-top-2 region. The MFDM may also include top-1 VIAs disposed between the metal-top layer and the metal-top-1 layer, and top-2 VIAs disposed between the metal-top-1 layer and the metal-top-2 layer.
    Type: Application
    Filed: June 14, 2016
    Publication date: March 30, 2017
    Inventors: Duncan C. Collier, Robert P. Masleid, Aparna Ramachandran, King Yen