Abstract: A sealing element of a hydrodynamic seal for relatively rotating elements, having a sealing surface (26) and consisting of or comprising at least one stabilising ply (58) of fabric impregnated with or disposed n a binder material which prevents relative movement of fibres of the fabric during use of the seal.

Abstract: A sealing element of a hydrodynamic seal for relatively rotating elements, having a sealing surface (26) and consisting of or comprising at least one stabilising ply (58) of fabric impregnated with or disposed in a binder material which prevents relative movement of fibres of the fabric during use of the seal.

Abstract: A first integrated circuit operable in association with a microfluidic structure is provided that includes a field generator, a controller configured to control the field generator to generate at least one field to effect movement of at least one analyte of interest in a fluid contained in the microfluidic structure, and an optical detection component configured to optically detect the at least one analyte of interest, as movement of the at least one analyte of interest through the microfluidic structure is effected by the at least one field. A second integrated circuit operable in association with a microfluidic structure is also provided that includes an optical detector configured to generate an output indicative of light from at least one analyte of interest in a fluid within the microfluidic structure; and circuitry configured to convert the output of the optical detector to a digital value.

Abstract: A high-density memory device and design method that utilizes some or all of the existing stacked process conductor layers provided by a manufacturing process to enhance the number of available bitlines and/or wordlines within the memory device. The memory device includes a plurality of memory cells arranged in columns and rows, a plurality of wordlines, a plurality of bitlines, at least one via-stack, wherein said existing stacked process conductor layers are used to implement at least one additional wordline or bitline. The via-stacks consist of a plurality of vias, are located close to a memory cell, and adapted to electrically connect the memory cell to multiple bitlines or multiple wordlines or both0. This design method increases the number of possible connections to or from each individual memory cell. When this design method is combined with varied configurations of basic underlying ROM cell types, even further increased cell density can be achieved.

Abstract: A method for a redundancy mechanism to increase defect and fault tolerance in semiconductor memories, such as DRAM, is disclosed. The repair of single cell, row, column or cluster faults is achieved by accessing a list of faulty regions in parallel with the main memory. This list of faulty regions uses a three-state storage device to allow groups of faulty memory locations to be marked with a single entry. This mechanism is designed to be fully transparent to the semiconductor memory, allowing full regular operation, no reduction in frequency, increase in area over conventional row and column redundancy or extra fabrication steps.

Abstract: A lip seal comprises resilient annular sealing means 2, 3, having a sealing lip 4 adapted for sealing engagement at an end 9 thereof with a relatively movable shaft and a valve lip 6, the lips being, in use, normally closed, and means 11, 13, for injecting fluid into a space 7 between the closed lips 4, 6 at sufficient pressure to cause the lips to open during use to allow the fluid to flow towards the end 9 of the sealing lip 4.

Abstract: Novel N-phenyl imidazole derivatives, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: Novel N-phenyl imidazole derivatives, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: A dynamic random access memory for storing one of N levels in each of a plurality of memory cells, the memory cells having storage capacitors coupled to bitline pairs through switches for writing and reading data to and from the memory cells, the memory comprising: at least N−1 bitline pairs, each bitline pair being divided into N−1 sub-bitlines by first switches therebetween; the sub-bitline pairs of each bitline being coupled to adjacent sub-bitline pairs by second switches therebetween, to form N−1 groups of sub-bitlines each for producing one of N−1 reference voltages; sense amplifiers coupled to each sub-bitline pair; N−1 sub-bitline pairs each having reference cells for selective coupling thereto; (N−2)(N−1) sub-bitline pairs each having generate cells for selective coupling thereto; and sub-bitline pairs being selectively connected in a group through switches such that: the sub-bitlines in the group are precharged to one of a plurality of voltages; one of the (

Abstract: Novel pyrroles, pyrazoles and triazoles, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists as described.

Abstract: Novel N-phenyl imidazole derivatives, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: Novel pyrroles, pyrazoles and triazoles, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: Novel indane and indene derivatives are described which are endothelin receptor antagonists.

Abstract: Novel pyrroles, pyrazoles and triazoles, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: A dynamic random access memory for storing one of N levels in each of a plurality of memory cells, the memory cells having storage capacitors coupled to bitline pairs through switches for writing and reading data to and from the memory cells, the memory comprising: at least N−1 bitline pairs, each bitline pair being divided into N−1 sub-bitlines by first switches therebetween; the sub-bitline pairs of each bitline being coupled to adjacent sub-bitline pairs by second switches therebetween, to form N−1 groups of sub-bitlines each for producing one of N−1 reference voltages; sense amplifiers coupled to each sub-bitline pair; N−1 sub-bitline pairs each having reference cells for selective coupling thereto; (N−2)(N−1) sub-bitline pairs each having generate cells for selective coupling thereto; and sub-bitline pairs being selectively connected in a group through switches such that: the sub-bitlines in the group are precharged to one of a plurality of voltages; one of the (

Abstract: Novel pyrroles, pyrazoles and triazoles, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.

Abstract: Novel indane and indene derivatives are described which are endothelin receptor antagonists.

Abstract: Novel indane and indene derivatives are described which are endothelin receptor antagonists.

Abstract: Indane and indene compounds are described which are endothelin receptor antagonists.

Abstract: Novel to isooxazoles, oxazoles, thiazoles, isothiazoles and imidazoles, pharmaceutical compositions containing these compounds and their use as endothelin receptor antagonists are described.