Abstract: A control system method and apparatus that minimizes the difference between multiple state-derived signals, with application to frequency synthesis, is described. Existing Alias-Locked Loops (ALLs) use digital samplers in the feedback path to achieve a wide frequency lock range for high speed frequency synthesis, at the cost of one additional reference clock, compared to a Phase-Locked Loop (PLL). We propose the differential alias-locked loop (D-ALL) circuit architecture which uses only one reference clock input. In this D-ALL synthesizer architecture, two frequencies are derived from the voltage-controlled oscillator (VCO) output and are compared as the two inputs to the phase frequency detector (PFD). In contrast, a PLL or an ALL has a reference clock as one PFD input and a frequency derived from the VCO output as the other PFD input.

Abstract: A level shifter circuit for integrated circuits has one or more inputs that operate in a first voltage domain, and a signal output that operates in a second voltage domain. In some embodiments, the level shifter circuit receives two complementary input signals. The level shifter uses cross-coupled PMOS transistors with drain-bulk breakdown voltage less than the gate-oxide breakdown voltage of high-voltage PMOS transistors to prevent gate-oxide breakdown caused by sub-threshold leakage of auxiliary high-voltage PMOS transistors in the off state. Permanent gate-oxide breakdown is prevented through non-permanent sub-nanoamp drain-bulk junction breakdown. The level shifter circuit has the advantages of small circuit size and low static power consumption.

Abstract: A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.

Abstract: A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.

Abstract: A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.

Abstract: A frequency synthesis phase-locked loop architecture using a regenerative sampling latch is described. The frequency divider typically employed in the feedback path of a frequency synthesis phase-locked loop is replaced by a regenerative sampling latch with a binary output. The regenerative sampling latch subsamples the frequency synthesizer output to produce a low-frequency aliased signal that can be processed further or directly used to lock the phase-locked loop. This architecture is referred to as an alias-locked loop. The relaxed constraints on the regenerative sampling latch make it possible to create high-speed frequency synthesizer phase-locked loops without the suffering the limitations imposed by traditional dividers connected directly to the oscillator output.

Abstract: A level shifter circuit for integrated circuits has one or more inputs that operate in a first voltage domain, and a signal output that operates in a second voltage domain. In some embodiments, the level shifter circuit receives two complementary input signals. The level shifter uses cross-coupled PMOS transistors with drain-bulk breakdown voltage less than the gate-oxide breakdown voltage of high-voltage PMOS transistors to prevent gate-oxide breakdown caused by sub-threshold leakage of auxiliary high-voltage PMOS transistors in the off state. Permanent gate-oxide breakdown is prevented through non-permanent sub-nanoamp drain-bulk junction breakdown. The level shifter circuit has the advantages of small circuit size and low static power consumption.

Abstract: A frequency synthesis phase-locked loop architecture using a regenerative sampling latch is described. The frequency divider typically employed in the feedback path of a frequency synthesis phase-locked loop is replaced by a regenerative sampling latch with a binary output. The regenerative sampling latch subsamples the frequency synthesizer output to produce a low-frequency aliased signal that can be processed further or directly used to lock the phase-locked loop. This architecture is referred to as an alias-locked loop. The relaxed constraints on the regenerative sampling latch make it possible to create high-speed frequency synthesizer phase-locked loops without the suffering the limitations imposed by traditional dividers connected directly to the oscillator output.

Abstract: A method is provided for reducing semiconductor memory wordline propagation delays of long wordlines by inserting pipeline registers in the wordlines between groups of memory cells.

Abstract: A high-density dynamic memory device with compact sense amplifier circuit is described. The memory device achieves high density through the use of a compact sense amplifier circuit that employs a single transistor to sense stored dynamic data. Functionality of the device is enabled by an architecture and method of operation that support a compact sense amplifier circuit. Enabling techniques include sequential sensing of memory columns, a two-pass write operation, a two-step refresh operation, a reference scheme that uses reference data stored in regular memory cells, and the application of digital signal processing to determine sensed data and cancel crosstalk noise.

Abstract: A systematic method for single-rail domino logic circuits is provided, in which inverting and non-monotonic logic functions can be integrated into a pipelined system with almost zero overhead. This logic family, called Clock Logic (CL)-domino is functionally complete while tolerating skew and minimizing the number of clock phases that must be distributed. Simulation results for a CL-domino ALU at 1-GHz under high skew (1-FO4) conditions, shows a power reduction of 41% over the same ALU implemented in dual-rail skew-tolerant domino logic. This power reduction incurs no performance penalty over dual-rail techniques, although in some cases additional design effort is required.

Abstract: The design methods described enable three-dimensional integrated circuit systems in which all of the dies, in a vertically bonded stack of dies, are identical. Only one mask set and wafer type is required since a single circuit design is produced for one die in the stack and reused for all the dies with little or no modification. The system scales directly as the level of stacking is increased while incurring no extra design effort, beyond that required for the initial design.

Abstract: A systematic method for single-rail domino logic circuits is provided, in which inverting and non-monotonic logic functions can be integrated into a pipelined system with almost zero overhead. This logic family, called Clock Logic (CL)-domino is functionally complete while tolerating skew and minimizing the number of clock phases that must be distributed. Simulation results for a CL-domino ALU at 1-GHz under high skew (1-FO4) conditions, shows a power reduction of 41% over the same ALU implemented in dual-rail skew-tolerant domino logic. This power reduction incurs no performance penalty over dual-rail techniques, although in some cases additional design effort is required.

Abstract: A column redundancy architecture for arrayed parallel processor devices is disclosed. In particular, daisy chained communication between processing elements is preserved after defective memory columns and their associated processing elements are disabled, by setting a bypass circuit within the processing element to be disabled. An address remapping circuit ensures that spare memory columns and associated processing elements replacing the defective memory columns and processing elements can be addressed in a linear column order. The column redundancy architecture is flexible as it permits replacement of arbitrary numbers of series adjacent processing elements as well as non adjacent processing elements with a minimal impact on device performance.

Abstract: The design methods described enable three-dimensional integrated circuit systems in which all of the dies, in a vertically bonded stack of dies, are identical. Only one mask set and wafer type is required since a single circuit design is produced for one die in the stack and reused for all the dies with little or no modification. The system scales directly as the level of stacking is increased while incurring no extra design effort, beyond that required for the initial design.