Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.

Abstract: An optical interconnect has a plurality of optical sources, a first lens configured to collimate optical beams from the plurality of optical sources, a second lens configured to refocus the optical beams, and a plurality of optical receivers configured to receive the refocused optical beams from the second lens.

Abstract: An electro-optical connector including a first connector end and a second connector end. The first connector end is coupled to a first electro-optical device. The second connector end coupled to a second electro-optical device. The second connector is flexibly coupled to a connector base so a second connector face can move flexibly with respect to a first connector face. A force mechanism on at least one connector end applies a force on an interface between the first connector end and the second connector end. The force is applied when the first connector face is within a predefined proximity of the second connector face. A mechanical guide on the connector end can align the first connector face with the second connector face when the force mechanism applies the force. The connector end for the force mechanism or the mechanical guide can be the first connector end or the second connector end.

Abstract: Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.

Abstract: An electrically actuated device includes a first electrode, a second electrode, and an active region disposed between the first and second electrodes. The device further includes at least one of dopant initiators or dopants localized at an interface between i) the first electrode and the active region, or ii) the second electrode and the active region, or iii) the active region and each of the first and second electrodes.

Abstract: An optical apparatus includes a substrate comprising a layer of thermally insulating material disposed thereon; an optical resonator disposed on the layer of thermally insulating material; and a trench in the thermally insulating material disposed around at least a portion of the optical resonator. The optical resonator is substantially thermally isolated from the substrate.

Abstract: Various embodiments of the present invention are related to microresonator systems that can be used as a laser, a modulator, and a photodetector and to methods for fabricating the microresonator systems. In one embodiment, a microdisk comprises: a top layer; a bottom layer; an intermediate layer having at least one quantum well, the intermediate layer sandwiched between the top layer and the bottom layer; a peripheral annular region including at least a portion of the top, intermediate, and bottom layers; and a current isolation region configured to occupy at least a portion of a central region of the microdisk including at least a portion of the top, intermediate, and bottom layers and having relatively lower index of refraction than the peripheral annular region.

Abstract: An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.

Abstract: Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.

Abstract: A memory device (100) includes a semiconductor wire including a source region (132), a drain region (134), and a channel region (130) between the source region (132) and the drain region (134). A gate structure that overlies the channel region includes a memristive portion (120) and a conductive portion (110) overlying the memristive portion (120).

Abstract: A multilayer memristive device includes a first electrode (410); a second electrode (405); a first memristive region (430) and a second memristive region (435) which created by directional ion implantation of dopant ions (420, 425) and are interposed between the first electrode (410) and the second electrode (405); and mobile dopants (315) which move within the first memristive region (430) and the second memristive region (435) in response to an applied electrical field.

Abstract: A memristive device (100) includes a first and a second electrode (110, 115); a silicon memristive matrix (105) interposed between the first electrode (110) and the second electrode (115); and a mobile dopant species (210, 215) within the silicon memristive matrix (105) which moves in response to a programming electrical field and remains substantially in place after the removal of the programming electrical field.

Abstract: One embodiment in accordance with the invention is a system that can include a first wafer and a second wafer. The first wafer and the second wafer can be bonded together by a wafer bonding process that forms a gap between the first wafer and the second wafer. The gap can be configured for receiving a heat extracting material.

Abstract: Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.

Abstract: A free-space optical communication system includes a detector array having a plurality of detector elements and a transmitting source. Dynamic movement of the optical signal on the detector array is caused by changes in orientation of the transmitting source. A tracker tracks the movement of the optical signal in real-time on the detector array. An output signal is derived from at least one of the detector elements illuminated by the optical signal.

Abstract: An optical resonator configured to be tuned using a charge-based memory cell includes an optical cavity configured to transmit light and receive injected charge carriers; a charge-based memory cell in proximity to or within the optical cavity, the memory cell containing a number of trapped charges which influence the resonant optical frequency of the optical resonator. A method of tuning an optical resonator includes applying a voltage or current to a charge-based memory cell to generate a non-volatile charge within the memory cell, the nonvolatile charge changing a resonant frequency of the optical resonator.

Abstract: Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied.

Abstract: Various embodiments of the present invention are related to microresonator systems and to methods for fabricating the microresonator systems. In one embodiment, a method of fabricating a microresonator system comprises: forming a multilayer system having a bottom layer, a top layer, and an intermediate layer having one or more quantum wells and sandwiched between the bottom layer and the top layer; embedding at least one waveguide in a substrate having a top surface, the at least one waveguide positioned adjacent to the top surface of the substrate; wafer bonding the top layer of the multilayer system to the top surface of the substrate; forming a microresonator in the multilayer system, wherein at least a portion of a peripheral annular region of the microresonator is portioned above the at least one waveguide; and forming a current isolation region in at least a portion of a central region of the microresonator.

Abstract: Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.

Abstract: Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.