Abstract: A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm−2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire.

Abstract: A method of forming a (gallium, aluminum, indium) nitride base layer on a substrate for subsequent fabrication, e.g., by MOCVD or MBE, of a microelectronic device structure thereon. Vapor-phase (Ga, Al, In) chloride is reacted with a vapor-phase nitrogenous compound in the presence of the substrate, to form (Ga, Al, In) nitride. The (Ga, Al, In) nitride base layer is grown on the substrate by HVPE, to yield a microelectronic device base comprising a substrate with the (Ga, Al, In) nitride base layer thereon. The product of such HVPE process comprises a device quality, single crystal crack-free base layer of (Ga, Al, In) N on the substrate, in which the thickness of the base layer may, for example, be on the order of 2 microns and greater and the defect density of the base layer may, for example, be on the order of 1E8 cm.sup.-2 or lower. Microelectronic devices thereby may be formed on the base layer, over a substrate of a foreign (poor lattice match) material, such as sapphire.

Abstract: A metalorganic complex of the formula:MA.sub.Y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MAY with X;y is an integer having a value of 2, 3 or 4;each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: A fluid storage and dispensing system, comprising: a fluid storage and dispensing vessel constructed and arranged for selective dispensing of fluid therefrom; a solid-phase support in the vessel; and an affinity medium on the solid-phase support, wherein the affinity medium reversibly takes up the fluid when contacted therewith, and from which the fluid is disengagable under dispensing conditions. The affinity medium may be a liquid, oil, gel, or solid (porous solid, thin film solid, or bulk solid). The system of the invention may be employed for the storage and dispensing of fluids such as hydride, halide and dopant gases for manufacturing of semiconductor products.

Abstract: A method of forming a thin film of BaSrTiO.sub.3 on a substrate in a chemical vapor deposition zone, with transport of a metal precursor composition for the metal-containing film to the chemical vapor deposition zone via a liquid delivery apparatus including a vaporizer. A liquid precursor material is supplied to the liquid delivery apparatus for vaporization thereof to yield the vapor-phase metal precursor composition. The vapor-phase metal precursor composition is flowed to the chemical vapor deposition zone for deposition of metal on the substrate to form the metal-containing film. The liquid precursor material includes a metalorganic polyamine complex, the use of which permits the achievement of sustained operation of the liquid delivery chemical vapor deposition process between maintenance events, due to the low decomposition levels achieved in the vaporization of the polyamine-complexed precursor.

Abstract: A metalorganic complex of the formula:MA.sub.y Xwherein:M is a y-valent metal;A is a monodentate or multidentate organic ligand coordinated to M which allows complexing of MA.sub.y with X;y is an integer having a value of 2, 3 or 4; each of the A ligands may be the same or different; andX is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O and F.The metal M may be selected from the group consisting of Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Bi, Tl, Y, Pb, Ni, Pd, Pt, Al, Ga, In, Ag, Au, Co, Rh, Ir, Fe, Ru, Sn, Li, Na, K, Rb, Cs, Ca, Mg, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, and W. A may be selected from the group consisting of .beta.-diketonates and their sulfur and nitrogen analogs, .beta.-ketoesters and their sulfur and nitrogen analogs, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: Metal organic chemical vapor deposition (MOCVD) source reagents useful for formation of metal-containing films, such as thin film copper oxide high temperature superconductor (HTSC) materials. The source reagents have the formula MAyX wherein: M is a metal such as Cu, Ba, Sr, La, Nd, Ce, Pr, Sm, Eu, Th, Gd, Tb, Dy, Ho, Er, Tm Yb, Lu Bi, Tl, Y or Pb; A is a monodentate or multidentate organic ligand; y is 2 or 3; MAy is a stable sub-complex at STP conditions; and X is a monodentate or multidentate ligand coordinated to M and containing one or more atoms independently selected from the group consisting of atoms of the elements C, N, H, S, O, and F. The ligand A may for example be selected from beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases.

Abstract: Novel tellurium compounds of the present invention have the formula:TeR.sup.1 R.sup.2wherein R.sup.1 is a fluorinated alkyl having the formula C.sub.n F.sub.(2n+1)-x H.sub.x where n may range from 1 to 6 and x may range from 0 to 2n, and R.sup.2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg.sub.x Cd.sub.1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R.sup.1).sub.2 and Te(R.sup.2).sub.2.

Abstract: This invention is directed to the metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics.

Abstract: Metal organic chemical vapor deposition (MOCVD) formation of copper oxide superconductor materials. Various source reagents of Group II elements suitable for high temperature superconductor (HTSC) material formation are described, including beta-diketonates, cyclopentadienyls, alkyls, perfluoroalkyls, alkoxides, perfluoroalkoxides, and Schiff bases, as well as complexes of such Group II compounds, utilizing monodentate or multidentate ligands to provide additional coordination to the Group IIA atom, so that the resulting complex is of enhanced volatility characteristics, and enhanced suitability for MOCVD applications. Also disclosed are methods of synthesizing such compounds and complexes, including a method of making Group II metal beta-diketonate compounds having enhanced thermal stability characteristics. Further disclosed are a vertical inverted reactor for chemical vapor deposition, and various methods of processing applied metal oxide films for enhanced HTSC character.

Abstract: N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed.

Abstract: A scavenger for purifying inert gas mixtures to remove Lewis acid and oxidant impurities therefrom, comprising (i) an inert inorganic support, and (ii) an active scavenging species on the support, formed by deposition thereon of an organometallic precursor and pyrolysis thereof at a selected elevated temperature. The organometallic precursor is an alkyl metal compound comprising a metal of Group IA, IIA, and/or IIIA, wherein the pyrolysis temperature may range from about 150.degree. C. to about 250.degree. C., depending on the specific alkyl metal compound employed as the precursor. Also disclosed are: a corresponding method of making the scavenger; a process for purifying inert gases by contacting same with the scavenger; and a vessel containing a bed of the scavenger, useful as an apparatus for purifying inert gases.

Abstract: An apparatus for purifying a gaseous mixture comprising arsine, phosphine, ammonia, and/or inert gases, to remove Lewis acid and/or oxidant impurities therefrom, comprising a vessel containing a bed of a scavenger, the scavenger including a support having associated therewith an anion which is effective to remove such impurities, such anion being selected from one or more members of the group consisting of: (i) carbanions whose corresponding protonated compounds have a pK.sub.a value of from about 22 to about 36; and (ii) anions formed by reaction of such carbanions with the primary component of the mixture.

Abstract: A scavenger for purifying inert gas mixtures to remove Lewis acid and oxidant impurities therefrom, comprising (i) an inert inorganic support, and (ii) an active scavenging species on the support, formed by deposition thereon of an organometallic precursor and pyrolysis thereof at a selected elevated temperature. The organometallic precursor is an alkyl metal compound comprising a metal of Group IA, IIA, and/or IIIA, wherein the pyrolysis temperature may range from about 150.degree. C. to about 250.degree. C., depending on the specific alkyl metal compound employed as the precursor. Also disclosed are: a corresponding method of making the scavenger; a process for purifying inert gases by contacting same with the scavenger; and a vessel containing a bed of the scavenger, useful as an apparatus for purifying inert gases.

Abstract: A process for drying a gaseous hydrogen halide of the formula HX, wherein X is bromine, Chlorine, FLuorine, or iodine, to remove water impurity therefrom, in which a scavenger precursor composition is provided, including a support having associated therewith partially or fully alkylated metal alkyl compounds or pendant groups. The precursor composition is reacted with gaseous hydrogen halide to convert the metal alkyl compounds and/or pendant functional groups to the corresponding metal halide compounds and/or pendant functional groups, which in turn react with the water impurity to produce an essentially completely water-free (below 0.1 ppm) gaseous hydrogen halide effluent. The process of the invention has utility for producing high purity, anhydrous gaseous hydrogen halides for semiconductor manufacturing operations.

Abstract: Silicon carbide is deposted by chemical vapor deposition from a vapor source having a single molecular species that provides both the silicon and the carbon. The molecular species has the composition C.sub.n Si.sub.n H.sub.m, where m ranges from 2n+1 to 4n+1 inclusive and n ranges from 2 to 6 inclusive, and exhibits a primary pyrolysis mechanism producing reactive fragments containing both silicon and carbon atoms. Unbalanced decomposition paths are avoided. The silicon and carbon atoms are necessarily codeposited in equal numbers and at equal rates onto the substrate, producing stoichiometric deposited silicon carbide. Preferred molecular sources include H.sub.3 SiCH.sub.2 CH.sub.2 SiH.sub.3, a silacycloalkane of the form (--SiH.sub.2 CH.sub.2 --).sub.p, where p is 2, 3, 4, or 5, and a cyclic structure of the form (--SiH(CH.sub.3)--).sub.q, where q is 4 or 5.

Abstract: A process to produce one or more Group II-VI epitazial layers over a crystalline substrate by directing flows of one or more Group II components and a Group VI metalorganic vapor to a heated substrate whereby the vapors thereby react to form the epitaxial layer(s), is improved in terms of lower reaction temperatures and higher product quality if, as the Group VI metalorganic vapor source, there is used a tellurium compound of the formula: ##STR1## wherein R.sup.1 and R.sup.2 are, independently, hydrogen or C.sub.1 -C.sub.4 alkyl, preferably, hydrogen.

Abstract: A scavenger, having utility for purifying a mixture comprising:(i) a primary component selected from one or more members of the group consisting of hydrogen selenide and hydrogen telluride, and(ii) impurities selected from one or more members of the group consisting of moisture and oxidants, comprising:(a) a support; and(b) associated with said support, one or more members of the group consisting of:(I) precusor compounds of the formula R.sub.3-x AlH.sub.x, wherein x is 0 or 1, and R is a hydrocarbon radical containing from 1 to 12 carbon atoms; and(II) aluminum chalconides of the formula Al.sub.2 M.sub.3, wherein M is selenium or tellurium.Illustrative supports useful in such scavenger include aluminosilicates, alumina, silica, carbon, and macroreticulate polymers. A process and apparatus are disclosed for purifying hyhrogen selenide and/or hydrogen telluride, to remove moisture and/or oxidant impurities therefrom, in which a bed of the scavenger is employed.

Abstract: A process for drying a gaseous hydrogen halide of the formula HX, wherein X is selected from the group consisting of bromine, chlorine, fluorine, and iodine, to remove water impurity therefrom, comprising:contacting the water impurity-containing gaseous hydrogen halide with a scavenger including a support having associated therewith one or more members of the group consisting of:(a) an active scavenging moiety selected from one or more members of the group consisting of:(i) metal halide compounds dispersed in the support, of the formula MX.sub.y ; and(ii) metal halide pendant functional groups of the formula -MX.sub.

Abstract: A scavenger, having utility for purifying a mixture comprising:(i) a primary component selected from one or more members of the group consisting of hydrogen selenide and hydrogen telluride, and(ii) impurities selected from one or more members of the group consisting of moisture and oxidants, comprising:(a) a support; and(b) associated with said support, one or more members of the group consisting of:(I) precursor compounds of the formula R.sub.3-x AlH.sub.x, wherein x is 0 or 1, and R is a hydrocarbon radical containing from 1 to 12 carbon atoms; and(II) aluminum chalconides of the formula Al.sub.2 M.sub.3, wherein M is selenium or tellurium.Illustrative supports useful in such scavenger include aluminosilicates, alumina, silica, carbon, and macroreticulate polymers. A process and apparatus are disclosed for purifying hydrogen selenide and/or hydrogen telluride, to remove moisture and/or oxidant impurities therefrom, in which a bed of the scavenger is employed.