Abstract: The present disclosure relates to squash plants that are resistant to the plant disease downy mildew caused by the pathogen Pseudoperonospora cubensis and/or powdery mildew caused by the pathogen Erysiphe cichoracearum. Specifically, the present disclosure relates to squash plants that are resistant to mildew disease including a mutated homoserine kinase gene encoding a mutated homoserine kinase protein. The present disclosure further relates to seeds, tissues, cells, or plant parts of the present squash plants, and to methods for identifying mildew resistant squash plants.

Abstract: Embodiments of the disclosure include methods and compositions related to lectin-coated bacteria of any kind and the imparted activity of being resistant to one or more antibacterial agents and or environmental conditions. In at least some cases, lectin-coated bacteria are utilized to improve a microbiome in a subject. The lectin-coated bacteria may also be employed for uptake into cells, including eukaryotic cells such as mammalian cells.

Abstract: A method for preparing a meat or poultry product includes placing a product having a thick edge and an opposing thin edge on a flat surface and creating an incision in the thick edge of the product along a line that falls approximately midway between an upper surface and a lower surface, the incision lying in a plane that cuts the product into a first fillet portion and a second fillet portion connected by a center portion each with substantially uniform thickness.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.

Abstract: A residue remover for removing polymeric material and etch residue includes 2-(2-aminoethylamino)-ethanol and optionally another two-carbon atom linkage alkanolamine compound, gallic acid or catechol, water, a polar organic solvent, and hydroxylamine. A process for removing photoresist or other residue from a substrate, such as an integrated circuit semiconductor wafer including titanium metallurgy, includes the steps of contacting the substrate with the above composition for a time and at a temperature sufficient to remove the photoresist or other residue from the substrate. Use of 2-(2-aminoethylamino)-ethanol in the composition and process provides superior residue removal without attacking titanium or other metallurgy on the substrate. The composition preferably has a flash point greater than about 130° C.