Patents by Inventor Dunn-Nian Yaung

Dunn-Nian Yaung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7067891
    Abstract: Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.
    Type: Grant
    Filed: November 4, 2003
    Date of Patent: June 27, 2006
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Dunn-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Yi-Shing Chang
  • Publication number: 20050093086
    Abstract: Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevated diode within the elevated diode sensor optoelectronic product. The sidewall passivation dielectric layer eliminates contact between the patterned conductor layer and an intrinsic diode material layer within the elevated diode, thus providing enhanced performance of the elevated diode sensor optoelectronic product.
    Type: Application
    Filed: November 4, 2003
    Publication date: May 5, 2005
    Inventors: Dunn-Nian Yaung, Shou-Gwo Wuu, Ho-Ching Chien, Yi-Shing Chang