Abstract: A magnetically-isolated wireless charging assembly enabling temporary attachment by magnetism to a device requiring charge by induction includes a housing defining an accommodating space, a plurality of magnetic members disposed within the accommodating space, a wireless charging receiver covering the plurality of magnetic members, and a wireless charging receiver. The wireless charging receiver is disposed on a side of the magnetic shielding member facing the plurality of magnetic members and the magnetic shielding member prevents the magnetic field of the magnetic members extending through or beyond the shielding member.

Abstract: Interaction data sets of consumers of an offering set with an application associated with an offering set are obtained. At least some of the interactions are associated with respective content presentation operations. A neural network model is trained, using the interaction data sets, to generate predictions of actions of a consumer at whom a set of content presentation operations is directed, and to provide action-attribution scores for the content presentation operations. The model includes convolutional layers and an attention module. Weights learned in the attention module are used to estimate the action-attribution scores. A trained version of the model is stored.

Abstract: An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.

Abstract: An AlGaN/GaN HEMT based on fluorinated graphene passivation and a manufacturing method thereof. Monolayer graphene (108) is transferred to an AlGaN (104) surface, is treated by using fluoride ions and then is insulated to thereby replace a conventional nitride passivation layer. Then, a high-k material (109) is grown on the graphene (108), and the high-k material (109) and the graphene (108) are jointly used as a gate dielectric for preparing an AlGaN/GaN metal-insulator-semiconductor (MIS) HEMT. Compared with the traditional passivation structure, the graphene (108) has the advantages of small physical thickness (sub-nanometer scale) and low additional threshold voltage. The structure and the method are simple, the effect is remarkable and the application prospect in technical fields of microelectronics and solid-state electronics is wide.