Patents by Inventor Durai Vishak Ramaswamy Nirmal

Durai Vishak Ramaswamy Nirmal has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ferroelectric Transistors and Assemblies Comprising Ferroelectric Transistors
    Publication number: 20230327019
    Abstract: Some embodiments include a ferroelectric transistor having a first electrode and a second electrode. The second electrode is offset from the first electrode by an active region. A transistor gate is along a portion of the active region. The active region includes a first source/drain region adjacent the first electrode, a second source/drain region adjacent the second electrode, and a body region between the first and second source/drain regions. The body region includes a gated channel region adjacent the transistor gate. The active region includes at least one barrier between the second electrode and the gated channel region which is permeable to electrons but not to holes. Ferroelectric material is between the transistor gate and the gated channel region.
    Type: Application
    Filed: June 9, 2023
    Publication date: October 12, 2023
    Applicant: Micron Technology, Inc.
    Inventors: Kamal M. Karda, Haitao Liu, Durai Vishak Ramaswamy Nirmal