Patents by Inventor Durai Vishal Nirmal Ramaswamy

Durai Vishal Nirmal Ramaswamy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory Cells and Methods of Forming Memory Cells
    Publication number: 20190296235
    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
    Type: Application
    Filed: June 13, 2019
    Publication date: September 26, 2019
    Applicant: Micron Technology, Inc.
    Inventors: Shuichiro Yasuda, Noel Rocklein, Scott E. Sills, Durai Vishal Nirmal Ramaswamy, Qian Tao
  • Memory cells and methods of forming memory cells
    Patent number: 9508931
    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
    Type: Grant
    Filed: December 29, 2014
    Date of Patent: November 29, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Shuichiro Yasuda, Noel Rocklein, Scott E. Sills, Durai Vishal Nirmal Ramaswamy, Qian Tao
  • Memory Cells and Methods of Forming Memory Cells
    Publication number: 20150140776
    Abstract: Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
    Type: Application
    Filed: December 29, 2014
    Publication date: May 21, 2015
    Inventors: Shuichiro Yasuda, Noel Rocklein, Scott E. Sills, Durai Vishal Nirmal Ramaswamy, Qian Tao