Patents by Inventor Dustin Kenneth Slisher

Dustin Kenneth Slisher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • eFUSE and method of fabrication
    Patent number: 8980720
    Abstract: An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch.
    Type: Grant
    Filed: August 20, 2014
    Date of Patent: March 17, 2015
    Assignee: International Business Machines Corporation
    Inventors: Edward P. Maciejewski, Dustin Kenneth Slisher, Stefan Zollner
  • eFuse and method of fabrication
    Patent number: 8912626
    Abstract: An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch.
    Type: Grant
    Filed: January 25, 2011
    Date of Patent: December 16, 2014
    Assignee: International Business Machines Corporation
    Inventors: Edward P. Maciejewski, Dustin Kenneth Slisher, Stefan Zollner
  • eFUSE AND METHOD OF FABRICATION
    Publication number: 20140357045
    Abstract: An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch.
    Type: Application
    Filed: August 20, 2014
    Publication date: December 4, 2014
    Inventors: Edward P. Maciejewski, Dustin Kenneth Slisher, Stefan Zollner
  • eFUSE AND METHOD OF FABRICATION
    Publication number: 20120187529
    Abstract: An improved eFuse and method of fabrication is disclosed. A cavity is formed in a substrate, which results in a polysilicon line having an increased depth in the area of the fuse, while having a reduced depth in areas outside of the fuse. The increased depth reduces the chance of the polysilicon line entering the fully silicided state. The cavity may be formed with a wet or dry etch.
    Type: Application
    Filed: January 25, 2011
    Publication date: July 26, 2012
    Applicant: International Business Machines Corporation
    Inventors: Edward P. Maciejewski, Dustin Kenneth Slisher, Stefan Zollner