Abstract: In some embodiments, an electrical circuit element, defined as “optoelectronic pixel”, comprises at least one silicon nanowire decorated with optoelectronically active particles and open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. In addition, some embodiments provide an optoelectronic sensor and wearable-patch sensor based on the array of the optoelectronic pixels, and the readout methods for these sensors.

Abstract: In some embodiments, an electrical circuit element, defined as “optoelectronic pixel”, comprises at least one silicon nanowire decorated with optoelectronically active particles and open for contact with a medium for sensing; a metal electrode open for contact with said medium and used for feeding a high-frequency sinusoidal stimulation in impedance measurements and for sensing properties of said medium; implanted source and drain electrodes connected to said silicon nanowire and leaving the gate area and parts of said electrode open for contact with said medium; electrical metal contacts for connecting said pixel to an electrical circuit; and a reference electrode open for contact with said medium for creating a three-electrode-cell system and providing a constant gate potential in the circuit. In addition, some embodiments provide an optoelectronic sensor and wearable-patch sensor based on the array of the optoelectronic pixels, and the readout methods for these sensors.