Abstract: Techniques are provided for using context tags in named-entity recognition (NER) models. In one particular aspect, a method is provided that includes receiving an utterance, generating embeddings for words of the utterance, generating a regular expression and gazetteer feature vector for the utterance, generating a context tag distribution feature vector for the utterance, concatenating or interpolating the embeddings with the regular expression and gazetteer feature vector and the context tag distribution feature vector to generate a set of feature vectors, generating an encoded form of the utterance based on the set of feature vectors, generating log-probabilities based on the encoded form of the utterance, and identifying one or more constraints for the utterance.

Abstract: The present invention relates to a coating composition producible from at least one yttrium-containing precursor, a solvent A, and a solvent B, which is different from the solvent A, the ratio of the vapor pressure of the solvent A at 20° C. to the vapor pressure of solvent B at 20° C. being p A p B ? 10 , to methods for producing it, and to its use.

Abstract: The invention relates to radiation curable silicone-epoxy resins, coating compositions containing said resins and to the use of these coating compositions for producing protection or dielectric layers in semiconductor elements.

Abstract: The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

Abstract: The present invention relates to metal oxide precursors comprising i) at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, ii) at least one non-photocrosslinkable ligand and iii) at least one photocrosslinkable ligand, to liquid coating compositions comprising the precursors, and to their use.

Abstract: The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X=F, Cl, Br, I with a secondary amine of the formula R?2NH where R?=alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R=alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Abstract: The present invention relates to a coating composition producible from at least one yttrium-containing precursor, a solvent A, and a solvent B, which is different from the solvent A, the ratio of the vapour pressure of the solvent A at 20° C. to the vapour pressure of solvent B at 20° C. being p A p B ? 10 , to methods for producing it, and to its use.

Abstract: The present invention relates to halogenated indium oxo alkoxides of the generic formula In7O2(OH)(OR)12X4(ROH)x where R=C1-C15-alkyl, C1-C15-alkenyl, C1-C15-alkynyl, C1-C15-alkoxyalkyl, C6-C15-aryl- or C7-C15-alkoxyaryl, X?F, Cl, Br, I and x=0 to 10, to processes for preparation thereof and to use thereof.

Abstract: The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

Abstract: The present invention relates to a novel thin film transistor (TFT) comprising a substrate (100) with a gate electrode layer (101) deposited and patterned thereon and a gate insulator layer (102) deposited on the gate electrode layer and the substrate, characterized in that the transistor further comprises (i) a carrier injection layer (103) arranged above the gate insulator layer, (ii) a source/drain (S/D) electrode layer (104) deposited on the carrier injection layer, and (iii) a semiconductor layer (106), methods for the production of such novel TFTs, devices comprising such TFTs, and to the use of such TFTs.

Abstract: The present invention relates to indium alkoxide compounds preparable by reacting an indium trihalide InX3 where X =F, Cl, Br, I with a secondary amine of the formula R?2NH where R? =alkyl, in a molar ratio of 8:1 to 20:1 in relation to the indium trihalide, in the presence of an alcohol of the generic formula ROH where R =alkyl, to a process for preparation thereof and to the use thereof for production of indium oxide-containing or (semi)conductive layers.

Abstract: The present invention relates to metal oxide precursors comprising i) at least one metal atom selected from the group consisting of In, Ga, Zn and Sn, ii) at least one non-photocrosslinkable ligand and iii) at least one photocrosslinkable ligand, to liquid coating compositions comprising the precursors, and to their use.

Abstract: The present invention relates to a liquid phase process for producing indium oxide-containing layers from nonaqueous solution, in which an anhydrous composition containing at least one indium oxo alkoxide of the generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d where x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, M=In, R, R?, R?=organic radical, X=F, Cl, Br, I and at least one solvent are applied to a substrate, optionally dried, and converted to an indium oxide-containing layer, to the layers producible by the process according to the invention and to the use thereof.

Abstract: The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula MxOy(OR)z[O(R?O)cH]aXb[R?OH]d, where M=In, Ga, Sn, and/or Zn, x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=0-1, d=0-25, R, R?, R?=organic group, X?F, Cl, Br, I, and ii) at least one solvent is applied to a substrate, is optionally dried, and is converted into a metal oxide-containing layer. The invention also relates to the layers that can be produced using the method of the invention and to the use thereof.

Abstract: The present invention relates to a process for producing semiconductive indium oxide layers, in which a substrate is coated with a liquid, anhydrous composition comprising a) at least one indium alkoxide and b) at least one solvent, optionally dried and thermally treated at temperatures greater than 250° C., to the layers producible by this process, and to the use thereof.

Abstract: The present invention relates to a liquid indium alkoxide-containing composition comprising at least one indium alkoxide and at least three solvents L1, L2 and L3, in which the solvent L1 is selected from the group consisting of ethyl lactate, anisole, tetrahydrofurfuryl alcohol, butyl acetate, ethylene glycol diacetate and ethyl benzoate, and the difference between the boiling points of the two solvents L2 and L3 under SATP conditions is at least 30° C., to processes for preparation thereof and to the use thereof.

Abstract: The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Abstract: The invention relates to ammoniacal formulations comprising a) at least one hydroxozinc compound and b) at least one compound of an element of the 3rd primary group, to the use thereof, to a method using said formulations to produce layers comprising ZnO and to electronic components produced using same.

Abstract: The present invention relates to a method for producing a semi-conductor laminate comprising a first and a second metal oxide layer as well as a dielectric layer, wherein the first metal oxide layer is arranged between the second metal oxide layer and the dielectric layer. The first and second metal oxide layers are formed accordingly from a first and a second liquid phase. The present invention also relates to a semi-conductor laminate that can be obtained from such a method, and to electronic components comprising such a semi-conductor laminate.

Abstract: The present invention relates to formulations comprising a) at least two different ZnO cubanes of which at least one ZnO cubane is present in solid form under SATP conditions and at least one ZnO cubane is present in liquid form under SATP conditions, and b) at least one solvent, to processes for producing semiconductive ZnO layers from these formulations, to the use of the formulations for producing electronic components and to the electronic components themselves.