Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: Envelope tracking can be employed to reduce power consumption of a power amplifier, but envelope tracking can introduce nonlinearities to a power amplifier. These nonlinearities can manifest themselves as noise at the output of the power amplifier. Embodiments described herein provide techniques for characterizing a parameter indicative of power amplifier noise when envelope tracking is employed. Measurement of this parameter can permit power amplifier designers to decide whether to forgo envelope tracking if a power amplifier is too susceptible to such noise, redesign the power amplifier to improve compatibility with envelope tracking, or to employ distortion compensation circuitry to reduce the noise output by the power amplifier. Counterintuitively, this distortion compensation circuitry may involve increasing the power, such as the envelope tracking power supply. However, increasing the power may be a desirable trade-off for increased linearity.

Abstract: According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one doped layer situated over the conductive channel layer. The at least one doped layer can include a heavily doped layer situated over a lightly doped layer. The PHEMT structure further includes a recessed ohmic contact situated on the conductive channel layer, where the recessed ohmic contact is situated in a source/drain region of the PHEMT structure, and where the recessed ohmic contact extends below the at least one doped layer. According to this exemplary embodiment, the recessed ohmic contact is bonded to the conductive channel layer. The recessed ohmic contact is situated adjacent to the at least one doped layer. The PHEMT structure further includes a spacer layer situated between the at least one doped layer and the conductive channel layer.

Abstract: According to an exemplary embodiment, a PHEMT (pseudomorphic high electron mobility transistor) structure includes a conductive channel layer. The PHEMT structure further includes at least one doped layer situated over the conductive channel layer. The at least one doped layer can include a heavily doped layer situated over a lightly doped layer. The PHEMT structure further includes a recessed ohmic contact situated on the conductive channel layer, where the recessed ohmic contact is situated in a source/drain region of the PHEMT structure, and where the recessed ohmic contact extends below the at least one doped layer. According to this exemplary embodiment, the recessed ohmic contact is bonded to the conductive channel layer. The recessed ohmic contact is situated adjacent to the at least one doped layer. The PHEMT structure further includes a spacer layer situated between the at least one doped layer and the conductive channel layer.