Abstract: Circuits, systems, and methods to compensate for non-linearities associated with a switching circuit are discussed herein. For example, a switch circuit can include a switch arm and a linearizer arm. The switch arm can have a first transistor connected between an input node and an output node. The switch arm can be configured to receive a radio-frequency signal. The linearizer arm can have a second transistor connected to at least one of a gate or a body of the first transistor. The linearizer arm can be configured to compensate a non-linearity effect generated by the switch arm.

Abstract: Discharge circuits, devices and methods. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.

Abstract: A method for fabricating a transistor device involves providing a substrate, forming an oxide layer over at least a portion of the substrate, forming a transistor over at least a portion of the oxide layer, and removing at least a portion of a backside of the substrate to form an opening providing radio-frequency isolation for the transistor.

Abstract: A transistor device includes a transistor implemented over a semiconductor substrate, one or more dielectric layers formed over the transistor, and a handle wafer layer disposed on at least a portion of the one or more dielectric layers, the handle wafer layer including a topside trench defined at least in part by sidewall portions of the handle wafer layer.

Abstract: Silicon-on-insulator (SOI) devices having contact layer. In some embodiments, a radio-frequency (RF) device can include a field-effect transistor (FET) implemented over a substrate layer, and an insulator layer implemented between the FET and the substrate layer. The RF device can further include a contact layer implemented between the insulator layer and the substrate layer to allow adjustment of RF performance of the FET. In some embodiments, such an RF device can be implemented as an RF switch in various products such as a die, a packaged module, and a wireless device.

Abstract: Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over an oxide layer, forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, electrically coupling an electrical element to the FET via the one or more electrical connections, disposing a handle wafer layer on at least a portion of the one or more dielectric layers, the handle wafer layer being at least partially over the electrical element; and removing at least a portion of the handle wafer layer to form an opening exposing at least a portion of the electrical element.

Abstract: Radio-frequency (RF) devices are fabricated by providing a field-effect transistor (FET) formed over a an oxide layer formed on a substrate layer and removing at least a portion of the substrate layer to form an opening exposing at least a portion of a backside of the oxide layer, the opening being positioned to enhance RF performance for one or more components of the RF device.

Abstract: Microelectromechanical systems (MEMS) having contaminant control features. In some embodiments, a MEMS die can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS die can further include a contaminant control component implemented relative to the electromechanical assembly. The contaminant control component can be configured to move contaminants relative to the electromechanical assembly. For example, such contaminants can be moved away from the electromechanical assembly.

Abstract: MEMS devices having discharge circuits. In some embodiments, a MEMS device can include a substrate and an electromechanical assembly implemented on the substrate. The MEMS device can further include a discharge circuit implemented relative to the electromechanical assembly. The discharge circuit can be configured to provide a preferred arcing path during a discharge condition affecting the electromechanical assembly. The MEMS device can be, for example, a switching device, a capacitance device, a gyroscope sensor device, an accelerometer device, a surface acoustic wave (SAW) device, or a bulk acoustic wave (BAW) device. The discharge circuit can include a spark gap assembly having one or more spark gap elements configured to facilitate the preferred arcing path.