Patents by Inventor E. Fred Schubert
E. Fred Schubert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11088291Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: GrantFiled: July 22, 2016Date of Patent: August 10, 2021Assignee: Rensselaer Polytechnic InstituteInventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Patent number: 9732427Abstract: The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.Type: GrantFiled: August 25, 2011Date of Patent: August 15, 2017Assignee: RENSSELAER POLYTECHNIC INSTITUTEInventors: David J. Poxson, Frank W. Mont, E. Fred Schubert, Richard W. Siegel
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Publication number: 20170084760Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: ApplicationFiled: July 22, 2016Publication date: March 23, 2017Applicant: Rensselaer Polytechnic InstituteInventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Publication number: 20140217355Abstract: A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape.Type: ApplicationFiled: February 5, 2013Publication date: August 7, 2014Applicants: SAMSUNG ELECTRONICS CO., LTD.Inventors: Gi Bum KIM, Ming MA, Ahmed NOEMAUN, E. Fred SCHUBERT, Jae-Hee CHO, Cheol Soo SONE, Sung Tae KIM, Chan Mook LIM
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Publication number: 20130209780Abstract: The invention is directed to a composite polymer/nanoporous film system and methods of fabrication of tunable nanoporous coatings on flexible polymer substrates. The porosity of the nanoporous film can be tuned during fabrication to a desired value by adjusting the deposition conditions. Experiments show that SiO2 coatings with tunable porosity fabricated by oblique-angle electron beam deposition can be deposited on polymer substrates. These conformable coatings have many applications, including in the field of optics where the ability to fabricate tunable refractive index coatings on a variety of materials and shapes is of great importance.Type: ApplicationFiled: August 25, 2011Publication date: August 15, 2013Applicant: RENSSELAER POLYTECHNIC INSTITUTEInventors: David J. Poxson, Frank W. Mont, E. Fred Schubert, Richard W. Siegel
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Patent number: 8502266Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.Type: GrantFiled: September 8, 2010Date of Patent: August 6, 2013Assignees: Samsung Electronics Co., Ltd., Rensselaer Polytechnic InstituteInventors: Min-Ho Kim, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert, Yongjo Park, Cheolsoo Sone, Sukho Yoon
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Patent number: 8451877Abstract: Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.Type: GrantFiled: March 17, 2011Date of Patent: May 28, 2013Assignee: Sandia CorporationInventors: Mary Crawford, Daniel Koleske, Jaehee Cho, Di Zhu, Ahmed Noemaun, Martin F. Schubert, E. Fred Schubert
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Patent number: 8164727Abstract: Image display structures and methods of forming image display structures are provided. The image display structure includes a liquid crystal layer disposed between opposing substrates and first and second transparent electrodes disposed between the liquid crystal layer and the respective opposing substrates. At least one of the first and second transparent electrodes includes a porosity such that a refractive index of the respective transparent electrode is reduced.Type: GrantFiled: April 28, 2010Date of Patent: April 24, 2012Assignee: Rensselaer Polytechnic InstituteInventors: Jaehee Cho, E. Fred Schubert, Xing Yan
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Publication number: 20110168261Abstract: Designs for ultra-high, broadband transmittance through windows over a wide range of incident angles are disclosed. The improvements in transmittance result from coating the windows with a new class of materials consisting of porous nanorods. A high transmittance optical window comprises a transparent substrate coated on one or both sides with a multiple layer coating. Each multiple layer coating includes optical films with a refractive index intermediate between the refractive index of the transparent substrate and air. The optical coatings are applied using an oblique-angle deposition material synthesis technique. The coating can be performed by depositing porous SiO2 layers using oblique angle deposition. The high transmittance window coated with the multiple layer coating exhibits reduced reflectance and improved transmittance, as compared to an uncoated transparent substrate.Type: ApplicationFiled: November 15, 2010Publication date: July 14, 2011Applicants: MAGNOLIA SOLAR, INC., RENNSELAER POLYTECHNIC INSTITUTEInventors: Roger E. Welser, Ashok K. Sood, David J. Poxson, Sameer Chhajed, Frank W. Mont, Jaehee Cho, E. Fred Schubert
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Publication number: 20110128489Abstract: Image display structures and methods of forming image display structures are provided. The image display structure includes a liquid crystal layer disposed between opposing substrates and first and second transparent electrodes disposed between the liquid crystal layer and the respective opposing substrates. At least one of the first and second transparent electrodes includes a porosity such that a refractive index of the respective transparent electrode is reduced.Type: ApplicationFiled: April 28, 2010Publication date: June 2, 2011Applicant: Rensselaer Polytechnic InstituteInventors: Jaehee Cho, E. Fred Schubert, Xing Yan
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Publication number: 20110120554Abstract: An anti-reflection coating has an average total reflectance of less than 10%, for example less than 5.9% such as from 4.9% to 5.9%, over a spectrum of wavelengths of 400-1100 nm and a range of angles of incidence of 0-90 degrees with respect to a surface normal of the anti-reflection coating. An anti-reflection coating has a total reflectance of less than 10%, for example less than 6% such as less than 4%, over an entire spectrum of wavelengths of 400-1600 nm and an entire range of angles of incidence of 0-70 degrees with respect to a surface normal of the anti-reflection coating.Type: ApplicationFiled: March 27, 2009Publication date: May 26, 2011Inventors: Sameer Chhajed, Jong Kyu Kim, Shawn-Yu Lin, Mei-Ling Kuo, Frank W. Mont, David J. Poxson, E. Fred Schubert, Martin F. Schubert
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Publication number: 20110001123Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.Type: ApplicationFiled: September 8, 2010Publication date: January 6, 2011Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., RENSSELAER POLYTECHNIC INSTITUTEInventors: Min-Ho Kim, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert, Yongjo Park, Cheolsoo Sone, Sukho Yoon
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Patent number: 7819557Abstract: The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.Type: GrantFiled: June 24, 2008Date of Patent: October 26, 2010Assignees: Rensselaer Polytechnic Institute, Samsung Electro-Mechanics Co., Ltd.Inventors: Martin F. Schubert, Ahmed Noemaun, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Cheolsoo Sone
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Patent number: 7816855Abstract: A LED device is provided having a diffuse reflective surface which includes an LED chip emitting light, a reflector cup having the LED chip arranged at a bottom surface thereof and having an angled surface which diffusely reflects the light emitted by the LED chip, and a light conversion material provided in the reflector cup for converting the light emitted by the LED chip into visible light rays. The light-conversion material is spatially separated from the LED chip by a length equal or greater than the maximum length of the LED chip.Type: GrantFiled: December 28, 2005Date of Patent: October 19, 2010Assignees: Samsung LED Co., Ltd., Rensselaer Polytechnic InstituteInventors: Jae-hee Cho, Jong-kyu Kim, Cheol-soo Sone, E. Fred Schubert
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Patent number: 7766495Abstract: A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.Type: GrantFiled: June 24, 2008Date of Patent: August 3, 2010Assignee: Samsung LED Co., Ltd.Inventors: Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Jaehee Cho
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Publication number: 20100166983Abstract: An omni-directional reflector having a transparent conductive low-index layer formed of conductive nanorods and a light emitting diode utilizing the omni-directional reflector are provided. The omni-directional reflector includes: a transparent conductive low-index layer formed of conductive nanorods; and a reflective layer formed of a metal.Type: ApplicationFiled: March 10, 2010Publication date: July 1, 2010Applicants: Samsung Electro-Mechanics Co., LTD., Rensselaer Polytechnic InstituteInventors: Jae-hee CHO, Jing-gun Xi, Jong-kyu Kim, Yong-jo Park, Cheol-soo Sone, E. Fred Schubert
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Publication number: 20100148199Abstract: A semiconductor light emitting device includes a semiconductor light emitting structure including first and second conductivity type semiconductor layers, and an active layer disposed therebetween, first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively, and a fine pattern for light extraction, formed on a light emitting surface from which light generated from the active layer is emitted. The fine pattern for light extraction is formed as a graded refractive index layer having a refractive index which decreases with vertical distance from the light emitting surface.Type: ApplicationFiled: November 4, 2009Publication date: June 17, 2010Applicants: SAMSUNG LED CO., LTD., RENSSELAER POLYTECHNIC INSTITUTEInventors: Jong Kyu Kim, Frank W. Mont, Ahmed N. Noemaun, David J. Poxson, E. Fred Schubert, Hyunsoo Kim, Cheolsoo Sone
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Patent number: 7560746Abstract: In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.Type: GrantFiled: February 28, 2007Date of Patent: July 14, 2009Assignees: Samsung Electro-Mechanics Co., Ltd., Rensselaer Polytechnic InstituteInventors: Jae-hee Cho, Martin Schubert, E. Fred Schubert, Jong-kyu Kim, Cheol-soo Sone
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Publication number: 20090080217Abstract: The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.Type: ApplicationFiled: June 24, 2008Publication date: March 26, 2009Applicants: Rensselaer Polytechnic Institute, Samsung Electro-Mechanics Co., Ltd.Inventors: Martin F. Schubert, Ahmed Noemaun, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Cheolsoo Sone
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Publication number: 20090050875Abstract: A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.Type: ApplicationFiled: August 20, 2008Publication date: February 26, 2009Applicants: SAMSUNG ELECTRO-MECHANICS CO., LTD., RENSSELAER POLYTECHNIC INSTITUTEInventors: Min-Ho Kim, Martin F. Schubert, Jong Kyu Kim, E. Fred Schubert, Yongjo Park, Cheolsoo Sone, Sukho Yoon