Patents by Inventor E. Hill

E. Hill has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080093608
    Abstract: An engineered structure of a light emitting device comprises multiple layers of alternating active and buffer materials disposed between AC or DC electrodes, which generate an electric field. The active layers comprise luminescent centers, e.g. group IV semiconductor nanocrystals, in a host matrix, e.g. a wide bandgap semiconductor or dielectric material such as silicon dioxide or silicon nitride. The buffer layers are comprised of a wide bandgap semiconductor or dielectric material, and designed with a thickness, in the direction of an applied electric field, that ensures that electrons passing therethrough picks up enough energy to excite the luminescent centers in the adjacent active layer at an excitation energy to emit light efficiently at a desired wavelength.
    Type: Application
    Filed: December 21, 2006
    Publication date: April 24, 2008
    Inventors: George Chik, Thomas MacElwee, Iain Calder, E. Hill
  • Publication number: 20070181906
    Abstract: A solid state light emitting device comprises one or more active layers comprising semiconductor nano-particles in a host matrix, e.g. silicon nano-particles in silicon dioxide or silicon nitride. The incorporation of carbon in the active layers provides a great improvement in performance through shortened decay time and enhance emission spectra, as well as reliability and lifetime. The emission wavelengths from the nano-particles can be made to correspond to the quantization energy of the semiconductor nano-particles, which allows the entire visible range of the spectrum be covered. Ideally an engineered structure of alternating active and buffer material layers are disposed between AC or DC electrodes, which generate an electric field.
    Type: Application
    Filed: December 21, 2006
    Publication date: August 9, 2007
    Inventors: George Chik, Thomas MacElwee, lain Calder, E. Hill, Peter Mascher, Jacek Wojcik
  • Publication number: 20060065943
    Abstract: Group IV semiconductor nanocrystal doped with rare earths or other light emitting metal to form alternating current solid-state devices that can be designed to operate at a variety of voltages including line voltages. The semiconductor nanocrystals are preferably silicon, silicon carbide, germanium or germanium carbide, and the electric luminescent device may have an upper and lower thin coat of a semiconductor nanocrystal glass material in turn connected to alternating current electrodes. The present invention enables one to fabricate a solid-state light that can use standard fixtures, e.g. Edison type, and standard AC voltages and frequencies for use in houses and businesses without refurbishing the installed lighting fixtures.
    Type: Application
    Filed: September 16, 2005
    Publication date: March 30, 2006
    Applicant: GROUP IV SEMICONDUCTOR INC.
    Inventor: E. Hill