Abstract: An amplifier circuit includes a first port, a second port, a reference potential port, and an RF amplifier device having a first terminal electrically coupled to the first port, a second terminal electrically coupled to the second port, and a reference potential terminal electrically coupled to the reference potential port. The RF amplifier device amplifies an RF signal across an RF frequency range that includes a fundamental RF frequency. An impedance matching network is electrically coupled to the first terminal and the first port. The impedance matching network includes a baseband termination circuit that presents low impedance in a baseband frequency region, a fundamental frequency matching circuit that presents a complex conjugate of an intrinsic impedance of the RF amplifier device in the RF frequency range, and a second order harmonic termination circuit that presents low impedance at second order harmonics of frequencies in the fundamental RF frequency range.

Abstract: A packaged RF power transistor includes an RF input lead, a DC gate bias lead, an RF power transistor comprising gate, source and drain terminals, and an input match network. The input match network includes a primary inductor electrically connected to the RF input lead, a secondary inductor electrically connected to the gate terminal and to the DC gate bias lead, and a tuning capacitor electrically connected to the RF input lead and physically disconnected from the gate terminal. The input match network is configured to block DC voltages between the RF input lead and the gate terminal and to propagate AC voltages in a defined frequency range from the RF input lead to the gate terminal. The tuning capacitor is configured to adjust a capacitance of the input match network based upon a variation in DC voltage applied to the RF input lead.

Abstract: An RF power transistor package includes an input lead, an output lead, and an RF power transistor having a gate, a drain and a defined gain over an RF frequency range for which the RF power transistor is configured to operate. The RF power transistor package further includes a transformer electrically isolating and inductively coupling the gate of the RF power transistor to the input lead. The transformer is configured to block signals below the RF frequency range of the RF power transistor and pass signals within the RF frequency range of the RF power transistor. The RF power transistor package also includes a DC feed terminal for providing DC bias to the gate of the RF power transistor.

Abstract: An RF power transistor package includes an input lead, an output lead, and an RF power transistor having a gate, a drain and a defined gain over an RF frequency range for which the RF power transistor is configured to operate. The RF power transistor package further includes a transformer electrically isolating and inductively coupling the gate of the RF power transistor to the input lead. The transformer is configured to block signals below the RF frequency range of the RF power transistor and pass signals within the RF frequency range of the RF power transistor. The RF power transistor package also includes a DC feed terminal for providing DC bias to the gate of the RF power transistor.