Abstract: A transpinnor-based magnetometer is provided having four resistive elements exhibiting GMR in a bridge configuration. A bias current is applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors. An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states. The drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two. The output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other. The frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.

Abstract: A transpinnor switch is described having a network of thin-film elements in a bridge configuration, selected ones of the thin-film elements exhibiting giant magnetoresistance. The switch also includes at least one input conductor inductively coupled to a first subset of the selected thin-film elements, and a switch conductor inductively coupled to a second subset of the selected thin-film elements for applying magnetic fields thereto. The switch is configurable using the switch conductor to generate an output signal representative of an input signal on the input conductor. The switch is also configurable using the switch conductor to generate substantially no output signal regardless of whether the input signal is present. The transpinnor switch described herein may be used in a wide variety of applications including, for example, a field programmable gate array.

Abstract: A sample-and-hold circuit is described which includes a network of thin-film elements in a bridge configuration. Each of the thin-film elements exhibits giant magnetoresistance. The circuit also includes a plurality of conductors inductively coupled to each of the thin-film elements for applying magnetic fields thereto. The circuit is operable using the plurality of conductors to sample and store a value corresponding to an input signal.

Abstract: A memory device is described which includes memory cells, access lines, and support electronics for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.

Abstract: Methods and apparatus are described relating to an electronic device which includes at least one configurable resistive element. Each such configurable resistive element includes at least one multi-layer thin film element exhibiting giant magnetoresistance. The resistance value of each configurable resistive element is configurable over a resistance value range by application of at least one magnetic field which manipulates at least one magnetization vector associated with the thin film element. One embodiment is an adjustable output gate. Another embodiment is a differential amplifier in which the gain of each channel is adjustable.

Abstract: Methods and apparatus are described relating to an electronic device which includes at least one configurable resistive element. Each such configurable resistive element includes at least one multi-layer thin film element exhibiting giant magnetoresistance. The resistance value of each configurable resistive element is configurable over a resistance value range by application of at least one magnetic field which manipulates at least one magnetization vector associated with the thin film element. One embodiment is an adjustable output gate. Another embodiment is a differential amplifier in which the gain of each channel is adjustable.

Abstract: A memory device is described which includes memory cells, access lines, and support electronics for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.

Abstract: A multi-layered memory cell is described having a plurality of magnetic layers, each of the magnetic layers being for magnetically storing one bit of information. A plurality of access lines are integrated with the plurality of magnetic layers and configured such that the bits of information stored in each of selected ones of the magnetic layers may be independently accessed using selected ones of the plurality of access lines and the giant magnetoresistive effect. The memory cell further includes at least one keeper layer. The magnetic layers, the access lines, and the at least one keeper layer form a substantially closed flux structure.

Abstract: A transpinnor-based magnetometer is provided having four resistive elements exhibiting GMR in a bridge configuration. A bias current is applied to the bridge, yielding an output if the bridge is unbalanced due to changes in the GMR resistors. An oscillating magnetic field is applied inductively to the GMR resistors alternately driving them between saturated magnetic states. The drive conductors are physically arranged so that an external magnetic field will oppose the applied field in two resistors and aid the applied field in the other two. The output is nonzero only when the sum of the applied field and external field exceeds the GMR coercivity in one pair of GMR films and not the other. The frequency of the output signal can be varied by switching the polarity of the bias current and controlling the phase with respect to the drive current.

Abstract: A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes comprise power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.

Abstract: A solid-state component is described which includes a network of thin-film elements. At least one thin-film element exhibits giant magnetoresistance. The network has a plurality of nodes, each of which represents a direct electrical connection between two of the thin-film elements. First and second ones of the plurality of nodes include power terminals. Third and fourth ones of the plurality of nodes comprise an output. A first conductor is inductively coupled to the at least one thin-film element for applying a first magnetic field thereto.