Patents by Inventor E. Senthil Kumar

E. Senthil Kumar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
    Patent number: 8395152
    Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: March 12, 2013
    Assignee: Indian Institute of Technology Madras
    Inventors: M. S. Ramachandra Rao, E. Senthil Kumar
  • STABLE P-TYPE SEMICONDUCTING BEHAVIOUR IN LI AND NI CODOPED ZNO
    Publication number: 20120199828
    Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
    Type: Application
    Filed: April 17, 2012
    Publication date: August 9, 2012
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY
    Inventors: M.S. Ramachandra RAO, E. Senthil KUMAR
  • Stable P-type semiconducting behaviour in Li and Ni codoped ZnO
    Patent number: 8187976
    Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
    Type: Grant
    Filed: December 21, 2009
    Date of Patent: May 29, 2012
    Assignee: Indian Institute of Technology Madras
    Inventors: M. S. Ramachandra Rao, E. Senthil Kumar
  • STABLE P-TYPE SEMICONDUCTING BEHAVIOUR IN LI AND NI CODOPED ZNO
    Publication number: 20110049506
    Abstract: A method is provided for growing a stable p-type ZnO thin film with low resistivity and high mobility. The method includes providing an n-type Li—Ni co-doped ZnO target in a chamber, providing a substrate in the chamber, and ablating the target to form the thin film on the substrate.
    Type: Application
    Filed: December 21, 2009
    Publication date: March 3, 2011
    Applicant: INDIAN INSTITUTE OF TECHNOLOGY
    Inventors: M.S. Ramachandra Rao, E. Senthil Kumar