Abstract: This disclosure provides an unmanned survey vessel with an anti-overturning structure and an anti-overturning method of same, and relates to the anti-overturning technique field of unmanned survey vessels. The unmanned survey vessel includes a vessel body and a plurality of buoys. The vessel body is a hollow frame of which a middle is provided with a discharge space. An uptight rod is vertically fixed at an upper-end of the tail part of the vessel body. A supporting beam is horizontally fixed at an upper-end of the upright rod. The supporting beam extends to a bow of the vessel. A rectangular notch is formed in one end, close to the bow, of the supporting beam. One end close to the bow inside the rectangular notch is rotatably provided with a guide rod through a pin shaft. The plurality of buoys are equally divided into two groups which are adjustably arranged on two side walls in the advancing direction of the vessel body respectively.

Abstract: An easy-to-assemble mounting rack for a deformation detection device for a steel structure and an assembling method thereof are provided. The easy-to-assemble mounting rack includes mounting parts including a back mounting plate, an operating rod, an adjusting seat, a ball-shaped block and an upright rod. The upright rod is vertically fixed at the bottom end face of the adjusting seat. A ball-shaped hole is formed in the adjusting seat. The ball-shaped block is rotatably embedded in the ball-shaped hole. A plug-in hole is formed in a radial direction of the ball-shaped block. One end of the operating rod slidably penetrates through the plug-in hole and is detachably connected with the back mounting plate. Screw holes directly opposite to the mounting holes of the deformation detection device are formed on the back mounting plate. The other end of the operating rod is fixedly sleeved with a counterweight plate.

Abstract: Disclosed herein are methods of reprograming autologous tissues or cells into astrocytes or astroglial progenitor cells using one or more small molecule compounds only without any transgenes. Also disclosed are methods of preventing or treating neurodegenerative diseases or neurological disorders associated with dysfunction of astrocytes, such as Alzheimer's Disease, by transplanting the astrocytes or astroglial progenitor cells produced by the methods disclosed herein into the brain of a subject suffering from the neurodegenerative disease or neurological disorder.

Abstract: Disclosed herein are methods of reprograming autologous tissues or cells into astrocytes or astroglial progenitor cells using one or more small molecule compounds only without any transgenes. Also disclosed are methods of preventing or treating neurodegenerative diseases or neurological disorders associated with dysfunction of astrocytes, such as Alzheimer's Disease, by transplanting the astrocytes or astroglial progenitor cells produced by the methods disclosed herein into the brain of a subject suffering from the neurodegenerative disease or neurological disorder.

Abstract: Disclosed herein are methods of reprograming autologous tissues or cells into astrocytes or astroglial progenitor cells using one or more small molecule compounds only without any transgenes. Also disclosed are methods of preventing or treating neurodegenerative diseases or neurological disorders associated with dysfunction of astrocytes, such as Alzheimer's Disease, by transplanting the astrocytes or astroglial progenitor cells produced by the methods disclosed herein into the brain of a subject suffering from the neurodegenerative disease or neurological disorder.

Abstract: A metal electrically programmable fuse (“eFuse”) includes a metal strip, having a strip width, of a metal line adjoined to wide metal line portions, having widths greater than the metal strip width, at both ends of the metal strip. The strip width can be a lithographic minimum dimension, and the ratio of the length of the metal strip to the strip width is greater than 5 to localize heating around the center of the metal strip during programming. Localization of heating reduces required power for programming the metal eFuse. Further, a gradual temperature gradient is formed during the programming within a portion of the metal strip that is longer than the Blech length so that electromigration of metal gradually occurs reliably at the center portion of the metal strip. Metal line portions are provides at the same level as the metal eFuse to physically block debris generated during programming.

Abstract: A metal electrically programmable fuse (“eFuse”) includes a metal strip, having a strip width, of a metal line adjoined to wide metal line portions, having widths greater than the metal strip width, at both ends of the metal strip. The strip width can be a lithographic minimum dimension, and the ratio of the length of the metal strip to the strip width is greater than 5 to localize heating around the center of the metal strip during programming. Localization of heating reduces required power for programming the metal eFuse. Further, a gradual temperature gradient is formed during the programming within a portion of the metal strip that is longer than the Blech length so that electromigration of metal gradually occurs reliably at the center portion of the metal strip. Metal line portions are provides at the same level as the metal eFuse to physically block debris generated during programming.

Abstract: Structures of electronic fuses (e-fuse) are provided. An un-programmed e-fuse includes a via of a first conductive material having a bottom and sidewalls with a portion of the sidewalls being covered by a conductive liner and the bottom of the via being formed on top of a dielectric layer, and a first and a second conductive path of a second conductive material formed on top of the dielectric layer with the first and second conductive paths being conductively connected through, and only through, the via at the sidewalls. A programmed e-fuse includes a via; a first conductive path at a first side of the via and being separated from sidewalls of the via by a void; and a second conductive path at a second different side of the via and being in conductive contact with the via through sidewalls of the via.

Abstract: Structures of electronic fuses (e-fuse) are provided. An un-programmed e-fuse includes a via of a first conductive material having a bottom and sidewalls with a portion of the sidewalls being covered by a conductive liner and the bottom of the via being formed on top of a dielectric layer, and a first and a second conductive path of a second conductive material formed on top of the dielectric layer with the first and second conductive paths being conductively connected through, and only through, the via at the sidewalls. A programmed e-fuse includes a via; a first conductive path at a first side of the via and being separated from sidewalls of the via by a void; and a second conductive path at a second different side of the via and being in conductive contact with the via through sidewalls of the via.

Abstract: Disclosed are RAGE fusion proteins comprising RAGE polypeptide sequences linked to a second, non-RAGE polypeptide. The RAGE fusion protein may utilize a RAGE polypeptide domain comprising a RAGE ligand binding site and an interdomain linker directly linked to an immunoglobulin CH2 domain. Such fusion proteins may provide specific, high affinity binding to RAGE ligands. Also disclosed is the use of the RAGE fusion proteins as therapeutics for RAGE-mediated pathologies.

Abstract: The present invention provides substituted heteroaryl derivatives of Formula (I), methods of their preparation, pharmaceutical compositions comprising the compounds of Formula (I), and methods of use in treating human or animal disorders. The compounds of the invention can be useful as inhibitors of action of AgRP on a melanocortin receptor and thus can be useful for the management, treatment, control, or the adjunct treatment of diseases which may be responsive to the modulation of melanocortin receptors including obesity-related disorders.

Abstract: Disclosed are RAGE fusion proteins comprising RAGE polypeptide sequences linked to a second, non-RAGE polypeptide. The RAGE fusion protein may utilize a RAGE polypeptide domain comprising a RAGE ligand binding site and an interdomain linker directly linked to an immunoglobulin CH2 domain. Such fusion proteins may provide specific, high affinity binding to RAGE ligands. Also disclosed is the use of the RAGE fusion proteins as therapeutics for RAGE-mediated pathologies.

Abstract: An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.

Abstract: An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.

Abstract: An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.

Abstract: An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.