Abstract: Implementations of a system configured for operation of a motor may include a motor controller coupled with a memory, the motor controller configured to be coupled with a motor. The motor controller may be configured to store a set of control parameters in the memory, the set of control parameters generated using a deep reinforcement learning agent and data associated with one or more parameters of the motor. The set of control parameters may be configured to define an optimized operating area for the motor.

Abstract: A data logger system is disclosed. Specific implementations include a flexible data logger system. The data logger system may include a flexible substrate and a radio-frequency identification (RFID) communications module coupled to the flexible substrate. The RFID communications module may include an antenna coupled with a RFID chip. The data logger system may also include a microprocessor and a memory module coupled to the flexible substrate, the microprocessor and the memory module electrically coupled with the RFID communications module. The data logger system may also include a temperature sensor coupled to the flexible substrate, the temperature sensor electrically coupled with the microprocessor and memory module, and a power source coupled to the flexible substrate, the power source electrically coupled with the microprocessor, the memory module, the temperature sensor, and the RFID communications module.

Abstract: A physical layout for a circuit using amorphous metal non-linear resistors as active devices for an in-plane switching liquid crystal display sub-pixel is provided. The lower interconnect of the two amorphous metal non-linear resistors and the lower electrode of the storage capacitor may be concurrently deposited and patterned. The area of the storage capacitor is defined by the overlap of the data signal inter-connect and the storage capacitor lower electrode, which is easily modified through the size of the lower electrode and/or the size of the data signal interconnect where it overlaps the lower electrode and does not degrade the aperture ratio of the pixel. Two embodiments of sub-pixel circuits are described. One, which employs a select line bridge, enables the use of full dot inversion of the image data. The second only allows row inversion of the image data.

Abstract: Implementations of a via for a semiconductor devices may include a first tungsten layer deposited conformally within the via, and may be recessed within the via, and a second tungsten layer deposited into the recess over the first tungsten layer. A plane formed by the second tungsten layer may be substantially parallel with a plane aligned substantially perpendicularly with a longest dimension of the via viewed in cross section.

Abstract: A physical layout for a circuit using amorphous metal non-linear resistors as active devices for an in-plane switching liquid crystal display sub-pixel is provided. The lower interconnect of the two amorphous metal non-linear resistors and the lower electrode of the storage capacitor may be concurrently deposited and patterned. The area of the storage capacitor is defined by the overlap of the data signal inter-connect and the storage capacitor lower electrode, which is easily modified through the size of the lower electrode and/or the size of the data signal interconnect where it overlaps the lower electrode and does not degrade the aperture ratio of the pixel. Two embodiments of sub-pixel circuits are described. One, which employs a select line bridge, enables the use of full dot inversion of the image data. The second only allows row inversion of the image data.

Abstract: An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane.

Abstract: An amorphous metal thin-film non-linear resistor (AMNR) is provided. The AMNR is an electronic device possessing symmetric non-linear current-voltage (I-V) characteristics, an exemplary configuration of which may comprise three sequentially deposited layers which include a lower amorphous metal thin-film (AMTF) interconnect, a thin-film insulator located on top of the AMTF interconnect, and two upper conductive contacts located on top of the insulator and disposed in the same physical plane.

Abstract: Nanolaminates comprised of alternating layers of amorphous, multi-component metallic films (AMMFs) and metal oxide films are disclosed as metamaterials whose physical properties can be engineered to customize the resulting electrical, average dielectric, and thermal properties. In certain configurations using AMMFs, the construct may be an optical or an electronic element, such a metal-insulator-metal (MIM) diode, for example.

Abstract: An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.

Abstract: An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.

Abstract: An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.