Abstract: A control aperture for an IR sensor includes a die; an IR sensor disposed on the die and an IR opaque aperture layer on the die having an IR transmissive aperture aligned with the IR sensor for controlling the field of view and focus of the IR sensor.

Abstract: The method provides a semiconductor structure and method for forming such a structure that provides for protection for resistive layers formed within the structure from contamination from adjacent layers. By encapsulating the resistive layer in a material that is resistant to the diffusion of contaminants it is possible to protect the resistive material during the processing required to manufacture the structure.

Abstract: A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first and second conductive layers being the electrodes of a capacitor whose capacitance varies with the position of the diaphragm relative to the plate.

Abstract: The invention provides a sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the at least one sensor element, the at least one optical element being configured to guide incident radiation on the cap to the at least one sensor element.

Abstract: A galvanically isolated signal conditioning system includes a signal conditioning circuit on an integrated circuit chip; a flying capacitor; and a galvanically isolating MEMS switching device on an integrated circuit chip for selectively switching the flying capacitor from across a pair of input terminals in one state to across the input terminals of the signal conditioning circuit in another state.

Abstract: The invention provides a sensor including a first sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the first sensor element, the at least one optical element being configured to guide incident radiation on the cap to the first sensor element. The sensor also includes a reference sensor element whose output can be used to reference the output of the first sensor element.

Abstract: The invention provides a thermal sensor having a first and second temperature sensing elements each being formed on a thermally isolated table in a first substrate.

Abstract: The invention provides a sensor element formed in a first substrate and having a thermal barrier disposed between the sensor element and a heat source provided elsewhere on the first substrate. The thermal barrier includes at least one pair of trenches formed within the first substrate, individual trenches of the pair being separated by a cavity.

Abstract: The invention provides a sensor array having a plurality of sensor elements formed in a first substrate and having a plurality of die temperature sensors located thereabout. Each of the die temperature sensors are configured to provide an output related to the temperature of the die on which they are located, the sensor elements providing an output indicative of the intensity of radiation incident thereon.

Abstract: An improved radiation sensor device includes a cap attached to an integrated circuit chip which has a radiation sensor on a surface with a cap spaced from and covering the radiation sensor; the cap and integrated circuit chip with radiation sensor are encapsulated in an encapsulant with a transparent portion of at least one of the cap and integrated circuit chip proximate the radiation sensor being exposed at the boundary of the encapsulant.

Abstract: A sealed capacitive sensor includes a substrate having a diaphragm forming a first plate of a capacitor; a second fixed plate of the capacitor spaced from the diaphragm and defining a predetermined dielectric gap and a sealing medium connecting together the substrate and fixed plate in an integrated structure and hermetically sealing the gap.

Abstract: The invention provides a sensor element formed in a first substrate and at least one optical element formed in a second substrate, the first and second substrates being configured relative to one another such that the second substrate forms a cap over the at least one sensor element, the at least one optical element being configured to guide incident radiation on the cap to the at least one sensor element.

Abstract: A spaced, bumped component structure including a first plate, a second plate spaced from the first plate by a first gap, a plurality of solder bumps interconnecting the plates and defining the first gap; at least one of the plates having an anomalous section including one of a raised platform and recess for defining a second gap having a different size from the first gap.

Abstract: A galvanically isolated signal conditioning system includes a signal conditioning circuit on an integrated circuit chip; a flying capacitor; and a galvanically isolating MEMS switching device on an integrated circuit chip for selectively switching the flying capacitor from across a pair of input terminals in one state to across the input terminals of the signal conditioning circuit in another state.

Abstract: A capacitive sensor including a housing having a hermetically sealed cavity, a plate in the cavity, a diaphragm forming a part of the cavity and spaced from the plate, a conductive layer on the first diaphragm, and a second conductive layer on the plate, the first and second conductive layers being the electrodes of a capacitor whose capacitance varies with the position of the diaphragm relative to the plate.

Abstract: Electro-mechanical structures and methods for forming same are disclosed. The structures are integratable onto an integrated circuit. The structures have a deformeable element formed in a plane substantially perpendicular to the substrate of the integrated circuit.