Abstract: An apparatus and method for removing volatile organic compounds (VOCs) from a stream of contaminated air using an adsorbent material. The stream of contaminated air is introduced into an end of a first hollow member which contains the adsorbent material. A perforated member disposed within the hollow member is configured to increase the air stream velocity such that dispersed particles of the adsorbent material are entrained in the air stream. Entrainment of the adsorbent in the contaminated air stream facilitates efficient removal of the VOCs. The cleaned air stream exits from a second end of the first hollow member, and the adsorbent material, having a quantity of VOCs adsorbed thereon, is directed to a reconditioning apparatus wherein the VOCs are thermally desorbed. The reconditioned adsorbent material is then returned to the first hollow member.

Abstract: A volatile organic compound (VOC) incinerator that is designed for installation in the exhaust airstream of VOC generating equipment. The incinerator includes an intake end, combustion chamber and an exhaust end. A flame baffle is disposed within the combustion zone to cause mixing of the VOC plus hot air mixture to increase efficiency and reduce fuel requirements. A temperature sensor is disposed within the combustion zone of the combustion chamber of the incinerator to monitor the combustion temperature to provide temperature signals to a controller. An air flow rate sensor is engaged in the intake end of the incinerator to provide air flow rate signals to the controller. The controller regulates the quantity of fuel injected into the VOC plus air mixture based upon the air flow rate signals and the temperature signals. A VOC detector is disposed in the intake end of the incinerator to provide a signal that turns the unit on or off depending upon the presence or absence of VOC's in the airstream.

Abstract: A semiconductor voltage reference device formed by ion implanting particles into a semiconductor body having first and second doped regions of opposite type conductivity formed therein. Such particles are implanted with a peak concentration at a predetermined depth from a surface of the body, providing a third region of conductivity type opposite that of the first region and having a doping concentration greater than that of the second region. The particles extend beneath the surface of the body into the first and second regions, a junction being formed between the first and third regions beneath the surface of the body. Electrodes are provided in ohmic contact with the first and second doped regions. When the junction is reverse biased by applying a proper voltage across the electrodes the junction breaks down beneath the surface of the body establishing a fixed or reference voltage between the electrodes.