Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.

Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.

Abstract: An improved semiconductor die bonding structure and method for electrical devices is described which utilizes a ductile foil between the semiconductor die and the base of the device package. The die is sealed to the foil with a die bonding material formed from a titania free base glass to which has been added 23.6 to 36.4 weight percent lead titanate powder to give a glass plus ceramic mixture consisting essentially of (by weight percent) 2.5-10.7% GeO.sub.2, 0-2.3% SiO.sub.2, 58.6-78.5% PbO, 0-5.3% PbF.sub.2, 7-13% B.sub.2 O.sub.3, 2.5-6.9% Al.sub.2 O.sub.3, 0-5.3% ZnO, 0.4-2.3% V.sub.2 O.sub.5, 0-5.3% CdO, and 6.2-9.6% TiO.sub.2. The ductile foil is bonded to the ceramic package base directly without intermediate layers or alternatively by means of an improved foil bonding glass material consisting essentially of (by weight percent) 10-15% SiO.sub.2, 45-55% PbO, 8-12% ZnO, 2-5% Al.sub.2 O.sub.3, and 25-30% B.sub.2 O.sub.3.

Abstract: An improved lead-free glass or glass plus alumina ceramic sealing material composition for making compression glass sealed electrical leads in semiconductor device packages is described wherein the improved sealing material consists essentially of the following range of ingredients, by weight percent:______________________________________ Pb-Free Glass Element Composition Range Glass Plus Alumina ______________________________________ SiO.sub.2 40-50 34-50 Al.sub.2 O.sub.3 2-12 2-25 K.sub.2 O 2-6 2-6 Na.sub.2 O 5-9 4-9 Li.sub.2 O 2-6 2-6 CaO 0-4 0-4 ZnO 5-12 4-12 BaO 1-5 1-5 TiO.sub.2 2-6 2-6 B.sub.2 O.sub.

Abstract: An improved lead-free glass or glass plus alumina ceramic sealing material for making compression glass sealed electrical leads in semiconductor device packages is described wherein the improved sealing material consists essentially of the following range of ingredients, by weight percent:______________________________________ Composition Range Element Pb-free Glass (Glass plus alumina) ______________________________________ SiO.sub.2 40-50 34-50 Al.sub.2 O.sub.3 2-12 2-25 K.sub.2 O 2-6 2-6 Na.sub.2 O 5-9 4-9 Li.sub.2 O 2-6 2-6 CaO 0-4 0-4 ZnO 5-12 4-12 BaO 1-5 1-5 TiO.sub.2 2-6 2-6 B.sub.2 O.sub.

Abstract: An improved sealing glass composition for making compression glass electrical feedthroughs in semiconductor device packages is described wherein the improved sealing glass consists essentially of (by weight percent) 63-68% SiO.sub.2, 3-6% Al.sub.2 O.sub.3, 8-9% K.sub.2 O, 5-6% Na.sub.2 O, 0.5-1.5% Li.sub.2 O, 2-4% BaO, 5-7% SrO, 2-4% CaO, 0.5-1.5% MgO, 0.5-1.5% TiO.sub.2, and 0.5-1.5% B.sub.2 O.sub.3.

Abstract: An improved sealing glass composition for making compression glass electrical feedthroughs in semiconductor device packages is described wherein the improved sealing glass consists essentially of (by weight percent) 63-68% SiO.sub.2, 3-6% Al.sub.2 O.sub.3, 8-9% K.sub.2 O, 5-6% Na.sub.2 O, 0.5-1.5% Li.sub.2 O, 2-4% BaO, 5-7% SrO, 2-4% CaO, 0.5-1.5% MgO, 0.5-1.5% TiO.sub.2, and 0.5-1.5% B.sub.2 O.sub.3.

Abstract: An inexpensive glass capacitive pressure sensor. Conductive capacitor electrodes are disposed on two flat glass plates, one serving as a diaphragm, the other as a substrate. The electrodes are positioned in a spaced apart, substantially parallel relationship to form the plates of a parallel plate capacitor. The glass plates are sealed together with a sealing glass mixture to bound a volume between the conductors. The volume is at a reference pressure, preferably a substantial vacuum. Differences between the pressure to be measured and this reference pressure cause a flexing of the glass diaphragm which is detected by measuring the capacitance between the two electrodes. A suitable sealing glass mixture which provides a hermetic seal between the glass plates is comprised of, in weight percent, 8-10 SiO.sub.2, 1-2 Al.sub.2 O.sub.3, 55-60 PbO, 7-9 PbF.sub.2, 7-10 ZnO, 4-6 CdO, and 10-15 B.sub.2 O.sub.3. The sealing glass mixture must be vacuum fined to permit hermetic sealing within a vacuum.

Abstract: An improved method for encapsulating a semiconductor diode wherein a semiconductor chip and a pair of leads are surrounded by an insulating glass. The improvement comprising the providing of an alkaline free low temperature encapsulating glass for semiconductors consisting essentially of 11-15 weight percent silica, 7-11 weight percent alumina, 63-68 weight percent lead oxide, 4-10 weight percent lead fluoride and 5-10 weight percent borate.

Abstract: A solder glass/ceramic composition and method for sealing television picture tube components wherein the composition remains vitreous throughout the sealing process. The composition comprises a mixture of 9-15 weight percent aluminum oxide and 91-85 weight percent solder glass. The solder glass components comprise, in weight percent of the glass alone, SiO.sub.2 about 2-4 percent, PbO about 64-66 percent, PbF.sub.2 about 5-10 percent, ZnO about 6-9 percent, CdO about 4-6 percent, and B.sub.2 O.sub.3 about 12-14 percent.

Abstract: An insulating or passivation glass consisting of 36 to 40 volume percent zircon and the balance is a base glass consisting essentially of 2 to 6 percent-SiO.sub.2, 70 to 75 percent-PbO 5 to 9 percent-ZnO, 0 to 4 percent-BaO, 2 to 5 percent-CdO, 0 to 2 percent-TiO.sub.2 and 10 to 14 percent-B.sub.2 O.sub.3, all of said percentages being weight percent.

Abstract: A method for sealing two ceramic pieces, a lead frame and a semiconductor chip together involving the application of pressure to a layer of sealing glass composition which remains vitreous throughout the sealing process is disclosed. The sealing glass composition comprises a mixture of sealing glass and zirconium silicate in the volume percentage amounts of 50-62 percent of glass and 50-38 percent of zirconium silicate. The glass components comprise, as a percentage weight of the glass alone, SiO.sub.2 about 0-2 percent, PbO about 65-72 percent, ZnO about 5-10 percent, PbF.sub.2 about 2-10 percent, CdO about 1-5 percent, TiO.sub.2 about 0.5-3 percent and B.sub.2 O.sub.3 about 10-14 percent.