Abstract: Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.

Abstract: Described examples include a micromechanical device having a substrate. The micromechanical device includes a MEMS element and a via between the MEMS element and the substrate, the via having a conductive layer extending from the substrate to the MEMS element and having a structural integrity layer on the conductive layer.

Abstract: A method of fabricating a MEMS device. A first spacer is formed above a CMOS substrate containing circuitry. Vias are formed within the first spacer. A first metal is formed above the first spacer and vias and patterned to form a MEMS element. A second spacer is formed above the MEMS element and first spacer. A via is formed within the second spacer. A second metal is formed above the second spacer and the via. A capping layer is formed above the second metal. The second metal is patterned to form a second MEMS element. The device is cleaned using a developer solution while the capping layer protects the second MEMS element. The first and second spacers are removed to release the first and second MEMS elements.

Abstract: A microelectromechanical system (MEMS) is comprised of a micromirror attached to a semiconductor device. A stack of inorganic high index materials comprised of titanium oxide, titanium nitride, and titanium is deposited above metal levels within the semiconductor device. Another stack of inorganic high index materials comprised of titanium oxide, titanium nitride, and titanium may be deposited in a continuous or dis-continuous layer within one or more of the dielectric layers. Each stack of high index material films is deposited at a depth and of thickness to achieve a minimum reflectance for the entire film system and to ensure maximum destructive interference at the targeted wavelength range. The high index material stack results in reduced light scattering during operation of the micromirror and improves contrast of the display system.

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract: In described examples, a MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract: A MEMS device is formed by forming a sacrificial layer over a substrate and forming a first metal layer over the sacrificial layer. Subsequently, the first metal layer is exposed to an oxidizing ambient which oxidizes a surface layer of the first metal layer where exposed to the oxidizing ambient, to form a native oxide layer of the first metal layer. A second metal layer is subsequently formed over the native oxide layer of the first metal layer. The sacrificial layer is subsequently removed, forming a released metal structure.

Abstract: In accordance with one embodiment of the present disclosure, a method for filling a void of an electromechanical system includes forming a void within a support layer. A conductive layer is formed outwardly from the support layer such that a portion of the conductive layer partially fills the void. A remainder of the void is filled with an inorganic material. A mirror is formed outwardly from the inorganic material and the conductive layer.