Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: A photoresist compound or composition achieves a uniform volume growth in a chemical expansion on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist composition comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist composition comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: A photoresist compound achieves a uniform volume growth in a chemical expansion reaction on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist compound comprises a film-forming polymer having molecular groups that can be converted into alkali-soluble groups through acid-catalyzed separation reactions, and reactive molecular groups that can react with an expansion component so as to form a chemical bond. In addition, the photoresist compound comprises a photoacid generator that releases an acid upon exposure with radiation from a suitable wavelength range, and a thermoacid generator that releases an acid when supplied with sufficient thermal energy.

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure: ##STR1## where D=O, S, or NH, and where R* is the parent body of the dicarboxylic acid and at least one of the groups R.sup.1 through R.sup.5 is F or CF.sub.3.

Abstract: In a method of synthesis of polybenzoxazole and polybenzothiazole precursors, a dicarboxylic acid or a dicarboxylaic acid ester is reacted with a bis-o-aminophenol or bis-o-aminothiophenol in a suitable solvent in the presence of an activating reagent having the following structure: ##STR1##

Abstract: In a process for the preparation of poly-o-hydroxyamides and poly-o-mercaptoamides, a bis-o-aminophenol or a bis-o-aminothiophenol is reacted with a dicarboxylic acid derivative with the following structure:M--CO--R*--CO--Mwhere M stands for the residue of an (optionally substituted) 2-hydroxybenzoxazole, 2-hydroxybenzothiazole, or 1-hydroxybenzotriazole or of corresponding mercapto compounds and R* is the parent body of the dicarboxylic acid.

Abstract: The dicarboxylic acid derivatives according to the invention have the following structure ##STR1## wherein X denotes O, S, (CF.sub.2).sub.m, C(CF.sub.3).sub.2 or CF.sub.2 --CF(CF.sub.3) (m=1 to 10), and R stems from the following compounds: fluoro- or trifluoromethyl- and nitro- or cyanophenols, thiophenols or -aminobenzenes, 4-hydroxy-, 4-mercapto- or 4-aminocoumarins, N-hydroxysuccinimides or N-hydroxymaleimides, 2-hydroxy- or 2-mercaptobenzoxazoles or -benzothiazoles and 1-hydroxy- or 1-mercaptobenzotriazoles.

Abstract: Premixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: New mixed polymers which can serve as base polymers for high-resolution resists are structured from 40 to 99 mole % of a tert. butyl ester of an unsaturated carboxylic acid and 1 to 60 mole % of an anhydride of an unsaturated carboxylic acid.

Abstract: A process for producing structures in the submicron range is characterized by the following steps:a photoresist layer comprising a polymer constituent with functional groups, which are capable of reacting with primary or secondary amines, and N-blocked imide groups, a photoinitiator which releases an acid when irradiated and a suitable solvent is deposited on to a substrate;the photoresist layer is dried;the photoresist layer is exposed in an imagewise manner;the exposed photoresist layer is subjected to a temperature treatment;the photoresist layer treated in this manner is developed with an aqueous-alkaline or organic developing agent into a photoresist structure; andthe photoresist structure is treated with a chemical agent containing a primary or secondary amine; a defined dark field loss, is adjusted thereby during development in the range of between 20 and 100 nm.

Abstract: To produce N-tertiary butoxycarbonyl-maleinimide, maleinimide is reacted in the presence of a heterocyclic nitrogen compound having at least one tertiary nitrogen atom (as a base) with a more or less equimolar quantity of di-tertiary butyl-dicarbonate in a suitable solvent at temperatures of up to about 80.degree. C.

Abstract: The invention provides photosensitive mixtures consisting of a polymer and a photoactive component which meet the requirements placed on photoresists. The polymer has carboxylic acid anhydride groups or phenolic hydroxyl groups and the photoactive component is an N-alkylated or N-arylated 1.4-dihydropyridine or a 1.4- dihydropyridine derivative of the following structure: ##STR1## where the R group is a (substituted) aryl group, which, in the ortho position to the bond with the dihydropyridine ring, carries a NO.sub.2 group; and R.sup.3 is alkyl, cyclohexyl or phenyl.