Abstract: A CCD is disclosed having a semiconductor substrate of a first conductivity type with a plurality of electrodes serially located above one planar surface thereof, a plurality of buried doped zones of a conductivity type opposite to that of the substrate and located in a plane spaced below a surface of the substrate. The rear edge of each electrode is in line with the front edge of a buried doped zone. The front edge of the same electrode overlaps the rear end of the next succeeding buried doped zone. The upper front corner of each electrode is bevelled.

Abstract: A monocrystalline layer is vapor-deposited on a substrate surface while substantially simultaneously such surface is irradiated with an ion beam having ions with a kinetic energy of at least 10 keV. The resultant ion current impinging on the substrate surface is controlled in such a manner that the sum of the vaporization rate and sputtering rate caused by such ions is smaller than the combined condensation rate of such ions and vaporized particles.

Abstract: Implanted areas are produced on a substrate by irradiating the surface of the substrate with two coherent high kinetic energy beams which are superimposed in relation to one another and spaced from the substrate surface in such a manner that maxima and/or minima of an interference pattern formed by the two particle streams are located on the substrate surface.

Abstract: A monocrystalline layer having select structures therein is deposited on a substrate surface from a gas phase or via a molecular beam while the substrate surface is being irradiated with two coherent particle beams superimposed in relation to one another. The coherent particle beams are comprised of particles having an energy of about 10 keV and the substrate is positioned relative to the particle beams so that a maxima of an interference pattern formed by such particle beams is located on the substrate surface.

Abstract: An arrangement for high speed ion beam switching in the production of determinate implantation doses for the doping, by ion implantation, in solid bodies, in which an electrode, preferably a diaphragm is interposed in the path of an ion beam from an ion source, and to which a potential is intermittently connected and disconnected in a controlled manner, to produce a potential wall which is disposed in the beam path of the ions, which has a value exceeding the kinetic energy of the ions, whereby the latter cannot pass therethrough.