Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents include compounds having not only a reactive group for attachment to an anchor group of the polymer, but also at least one aromatic group.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar that it does not dissolve the structured resist or dissolves it only to an insignificant extent. Because of the lower surface tension of these solvents, the danger of a collapse of these structures is additionally avoided.

Abstract: A photoresist includes a polymer having a main chain composed of alternating silicon and oxygen atoms and a polymer chain segment which linked as a side chain to the main chain and whose chain is composed of carbon atoms. The chain composed of carbon atoms includes acid-labile groups, so that the photoresist according to the invention can be constructed as a chemically amplified photoresist.

Abstract: The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. After the removal of the chemically unamplified sections, the amplified sidewall structures are transferred to the substrate. The process permits a resolution of structures that are not producible using the currently customary exposure wavelengths.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.

Abstract: The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying agents used include compounds having not only a reactive group for the attachment to the anchor group of the polymer, but also at least one aromatic group.

Abstract: A dry-developable, positively acting TSI resist contains the following components:a suitable solvent,a strong acid former as the photoactive component, anda base polymer in the form of a copolymer or terpolymer with maleic acid anhydride as a basic unit and glycidyl methacrylate and/or a styrene derivative as a further basic unit, and possibly an additive.

Abstract: Cost-effective, negative resists having high thermal stability based on oligomeric and/or polymeric polybenzoxazole precursors are disclosed. Also disclosed are resist solutions having a high level of storage stability when they contain a photoactive component in the form of a bisazide and when the polybenzoxazole precursors are hydroxypolyamides having the following structure: ##STR1## where R, R*, R.sub.1, R.sub.1 * and R.sub.2 are aromatic groups, R.sub.3 is an aromatic group or a norbornene residue, and wherein n.sub.1, n.sub.2 and n.sub.3, are defined as follows:n.sub.1 =1 to 100, n.sub.2 and n.sub.3 =0 orn.sub.1 and n.sub.2 =1 to 100, n.sub.3 =0 orn.sub.2 =1 to 100, n.sub.1 and n.sub.3 =0 orn.sub.1, n.sub.2 and n.sub.3 =1 to 100 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both) orn.sub.1 and n.sub.3 =1 to 100, n.sub.2 =0 (with R.noteq.R* or R.sub.1 .noteq.R.sub.1 * or both),on the condition that: n.sub.1 +n.sub.2 +n.sub.3 .gtoreq.3.

Abstract: A process for biological treatment of waste water is characterized by the following sequence of steps: mixing of the incoming raw waste water with activated sludge containing a first, chemoorganotrophic biocenosis in an anerobic preliminary stage (APS); separation of the solution from the activated sludge in an intermediate settling basin (IS); nitrification of the separated solution by means of a second, chemolithotrophic biocenosis in a nitrification stage (NIR) with an aerobic medium; remixing of the nitrified solution with the activated sludge containing the first, chemoorganotrophic biocenoses; common denitrification of the mixture of solution and activated sludge in a denitrication stage (DER) with an anoxic medium; aeration to obtain an aerobic medium; separation of the purified waste water from the activated sludge in a resettling basin (RSB); recycling (C) of the activated sludge to the anaerobic preliminary stage (APS).

Abstract: Oligomeric and/or polymeric radiation-sensitive polyimide and polyisoindoloquinazoline dione precursors which are soluble in organic solvents, and are of high purity, i.e. in particular chloride-free, are produced simply by first reacting an aromatic and/or heterocyclic tetracarboxylic acid dianhydride with an olefinically unsaturated alcohol to an olefinically unsaturated tetracarboxylic acid diester, and then reacting the latter, in the presence of a carbodiimide, with a diamino compound or a diamino compound having at least one ortho-positioned amino group. The radiation-sensitive precursors thus produced are suitable, for instance, for the production of highly heat-resistant relief structures.

Abstract: The present invention relates to oligomeric and/or polymeric precursor stages of polyimidazoles and polyimidazopyrrolones, as well as to a method for preparing these new precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on amino group-containing polycondensation products of aromatic and/or heterocyclic tetraamino compounds with dicarboxylic-acid chlorides or esters or on amino group-containing polyaddition products of the tetraamino compounds and tetracarboxylic-acid dianhydrides. The radiation-reactive precursor stages according to the invention are suited, for example, for the preparation of highly heat-resistant relief structures.

Abstract: The invention relates to oligomeric and/or polymeric precursor stages of polyoxazoles, as well as to a method for the preparation of these precursor stages. New radiation-reactive polymer precursor stages are provided comprised of addition products of olefinically unsaturated monoepoxides on hydroxyl group-containing polycondensation products of aromatic and/or heterocyclic dihydroxy diamino compounds with dicarboxylic-acid chlorides or esters. The radiation-reactive precursor stages according to the invention are suitable, for example, for the preparation of highly heat-resistant relief structures and as coatings for the optical fibers of light waveguides.

Abstract: The invention relates to heat-resistant positive resists based upon precursor stages of highly heat-resistant polymers and light-sensitive diazoquinones, as well as to a method for preparing heat-resistant relief structures of such positive resists. The positive resists of the type mentioned are developed in such a manner that they are heat-resistant as well as have a long storage life and are easily processed. The invention provides for the use of oligomer and/or polymer precursor stages of polyoxazoles in the form of polycondensation products of aromatic and/or heterocyclic dihydroxydiamino compounds and dicarboxylic acid chlorides or esters. The positive resists according to the invention are suitable especially for applications in microelectronics.

Abstract: The present invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones as well as to a method for the preparation of these radiation-reactive precursor stages. The invention provides addition products of olefinically unsaturated monoepoxides on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic tetracarboxylic-acid dianhydrides and diamino compounds or diamino compounds with at least one ortho-position amido group, or on carboxyl group-containing polyaddition products of aromatic and/or heterocyclic dihdyroxy dicarboxylic acids or corresponding diaminodicarboxylic acids and diisocyanates. The radiation-reactive precursor stages according to the invention are suitable, for example, for the manufacture of highly heat-resistant relief structures.

Abstract: The invention relates to oligomeric and/or polymeric radiation-reactive precursor stages of polymers on the basis of heterocycles and has the objective to make available radiation-reactive precursor stages of this kind in which the problems arising due to the need of using organic solvents are eliminated. For this purpose, the invention provides addition products of cyclic carboxylic-acid anhydrides with hydroxyl group-containing compounds, where the hydroxyl group-containing compounds represent addition products of olefinically unsaturated monoepoxides on carboxyl group-containing prepolymers of polyimides, polyisoindoloquinazoline diones, polyoxazine diones and polyquinazoline diones or on amino group-containing prepolymers of polyimidazoles and polyimidazopyrrolones or on hydroxyl group-containing prepolymers of polyoxazoles. The radiation-reactive precursor stages according to the invention are suited, for example, for the manufacture of highly heat-resistant relief structues.

Abstract: The invention relates to a method for the preparation of highly heat-resistant relief structures with a base of polymers of heterocyclic structure by applying radiation-sensitive soluble polymer precursor stages in the form of a film or foil to a substrate, irradiating the film or foil through negative patterns with actinic light or by deflecting a light, electron or ion beam, removing the non-irradiated film or foil portions and, optionally, by subsequent annealing, as well as to the use of relief structures prepared in this manner.