Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.

Abstract: The present invention relates to a III-N single crystal adhering to a substrate, wherein III denotes at least one element of the third main group of the periodic table of the elements, selected from the group of Al, Ga and In, wherein the III-N single crystal exhibits, within a temperature range of an epitaxial crystal growth, a value (i) of deformation ?XX in the range of <0. Additionally or alternatively, the III-N single crystal exhibits at room temperature a value (ii) of deformation ?XX in the range of <0.

Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Abstract: The present invention relates to the production of III-N templates and also the production of III-N single crystals, III signifying at least one element of the third main group of the periodic table, selected from the group of Al, Ga and In. By adjusting specific parameters during crystal growth, III-N templates can be obtained that bestow properties on the crystal layer that has grown on the foreign substrate which enable flawless III-N single crystals to be obtained in the form of templates or even with large III-N layer thickness.

Abstract: The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the material for forming the mask layer consists at least partially of tungsten silicide nitride or tungsten silicide and wherein the semiconductor substrate self-separates from the starting substrate without further process steps.

Abstract: The invention relates to a free-standing semiconductor substrate as well as a process and a mask layer for the manufacture of a free-standing semiconductor substrate, wherein the semiconductor substrate self-separates from the starting substrate without further process steps.

Abstract: The invention relates to a method for producing c-plane GaN substrates or AlxGa1-xN substrates using an original substrate. Said method is characterized by the following steps: a tetragonal (100)-oriented or (?100)-oriented original LiAlO2 substrate is used; said original substrate is nitrided in a nitrogen compound-containing atmosphere at temperatures lying below the decomposition temperature of LiAlO2; a nucleation layer is grown at temperatures ranging between 500° C. and 700° C. by adding GaCl or AlCl or a mixture of GaCl and AlCl in a nitrogen compound-containing atmosphere; single-crystalline c-plane-oriented GaN or AlxGa1-xN is grown on the nucleation layer at temperatures ranging between 900° C. and 1050° C. by means of hydride vapor phase epitaxy (HVPE) with GaCl or AlCl or a GaCl/AlCl mixture in a nitrogen compound-containing atmosphere; and the substrate is cooled.

Abstract: A synergistically active herbicidal composition which comprises, as active components, a mixture of 1-(3-chloro-4,5,6,7-tetrahydropyrazolo-[1,5-a]-pyridin-2-yl)-5-(methylprop argylamino)-4-pyrazolylcarbonitrile [Component (A)] and a herbicide selected from the group consisting of bentazone, molinate, daimuron, thiobencarb, butachlor, pretilachlor, dimepiperate, fenoxaprop-ethyl, clomeprop, cinmethylin, bromobutide, quinclorac, mefenacet, pyrazosulfuron-ethyl, esprocarb, cinosulfuron, thenylchlor, cumyluron, MK 243, naproanilide, anilofos, benfuresate, bifenox, CH-900, MCPA, nitrofen, oxadiazon, pendimethalin, simetryn, sulcotrione (ICIA0051), trifluralin, piperophos, pyributicarb, ethoxysulfuron, bensulfuronmethyl, pyrazolate, pyrazoxyfen, benzofenap, cyclosulfamuron, cyhalofop-butyl, NBA-061, azimsulfuron, propanil or imazosulfuron [Component (B)] and which are suitable for controlling undesirable plants in rice cultivation.

Abstract: There are described new 2-imino-1,3-dithietanes of general formula I ##STR1## in which R is the group ##STR2## in which A is CFHal, C(CH.sub.3)C.sub.1-4 -alkyl, C(CH.sub.3)CHal.sub.3, C(CH.sub.3)CF.sub.2 Cl, C(CH.sub.3)CFCl.sub.2, C.sub.2 H.sub.4, C.sub.2 H.sub.3 Hal, C.sub.2 H.sub.2 Hal.sub.2, C.sub.2 HHal.sub.3, C.sub.2 F.sub.2 Cl.sub.2, C.sub.2 F.sub.4 or C.sub.2 F.sub.3 Cl, in which Hal is F or Cl,Y is nitrogen or CH,R.sup.1 is fluoro-C.sub.1-12 -alkyl, fluoro-C.sub.2-12 -alkenyl, fluoro-C.sub.2-12 -alkynyl, fluorocyclopropyl or fluorocyclopropylmethyl;X is oxygen or sulphur,2 is defined in the specification andn is 0, 1 or 2,as well as their acid addition salts, a process for their preparation and their use as pesticides. The new compounds are especially useful as nematicides.

Abstract: Clutches in rotating drives of spools feeding threads to a weaving or knitting machine are disengaged when respective gravity-biased travelling compensating pulleys reach their lower limits and are reengaged when the respective pulleys reach their upper limits. The variable loops of thread formed by the compensating pulleys compensate for different speeds of thread take up by the machine.