Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: A memory array including a varying width channel is disclosed. The array includes a plurality of WLs, which are above a layer, where the layer can be, for example, a Select Gate Source (SGS) of the memory array, or an isolation layer to isolate a first deck of the array from a second deck of the array. The channel extends through the plurality of word lines and at least partially through the layer. In an example, the channel comprises a first region and a second region. The first region of the channel has a first width that is at least 1 nm different from a second width of the second region of the channel. In an example, the first region extends through the plurality of word lines, and the second region extends through at least a part of the layer underneath the plurality of word lines. In one case, the first width is at least 1 nm less than a second width of the second region of the channel.

Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

Abstract: A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.