Abstract: On-chip testing of a superconductive integrated circuit device includes receiving a superconductive circuit design having superconductive logic elements. Further, a first testability characteristic for first test circuitry at a first node within the superconductive circuit design is determined. The first testability characteristic corresponds to one or more of a test generation control level and a test observability control level. An updated superconductive circuit design from the superconductive circuit design is generated based on the first testability characteristic for the first test circuitry. The superconductive circuit design includes the first test circuitry at the first node.

Abstract: A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.

Abstract: A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.

Abstract: A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. The heavy-metal nanostrip includes at least a first layer including a heavy metal and a second layer which includes a different heavy-metal. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis, the ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of the flow of electrical charge through the heavy-metal nanostrip includes an angle ? with respect to the short axis of the nanomagnet.

Abstract: A hybrid integrated thermal sensor device includes a magnetic tunnel junction (MTJ) device electrically coupled in series with at least one CMOS transistor and disposed between a voltage rail terminal and a ground terminal. An output terminal is electrically coupled to a drain of the at least one CMOS transistor. The MTJ operates in an anti-parallel state and the output terminal provides a voltage indicative of a temperature of the MTJ device based on an MTJ antiparallel resistance. A distributed sensor network for real-time thermal mapping of an integrated circuit (IC) is also described.

Abstract: A method to adaptively and dynamically set a bias scheme of a crossbar array for a write operation includes: performing a read-before-write operation to determine a number of cells n to be written during a write operation; comparing n to a predetermined threshold value to determine an efficient bias scheme; setting at least one voltage regulator to provide a bias voltage according to the efficient bias scheme; and performing the write operation. A method to determine threshold value to determine an efficient bias scheme of a crossbar array and an energy efficient crossbar array device are also described.

Abstract: A method of controlling a trajectory of a perpendicular magnetization switching of a ferromagnetic layer using spin-orbit torques in the absence of any external magnetic field includes: injecting a charge current Je through a heavy-metal thin film disposed adjacent to a ferromagnetic layer to produce spin torques which drive a magnetization M out of an equilibrium state towards an in-plane of a nanomagnet; turning the charge current Je off after te seconds, where an effective field experienced by the magnetization of the ferromagnetic layer Heff is significantly dominated by and in-plane anisotropy Hkx, and where M passes a hard axis by precessing around the Heff; and passing the hard axis, where Heff is dominated by a perpendicular-to-the-plane anisotropy Hkz, and where M is pulled towards the new equilibrium state by precessing and damping around Heff, completing a magnetization switching.

Abstract: A hybrid integrated thermal sensor device includes a magnetic tunnel junction (MTJ) device electrically coupled in series with at least one CMOS transistor and disposed between a voltage rail terminal and a ground terminal. An output terminal is electrically coupled to a drain of the at least one CMOS transistor. The MTJ operates in an anti-parallel state and the output terminal provides a voltage indicative of a temperature of the MTJ device based on an MTJ antiparallel resistance. A distributed sensor network for real-time thermal mapping of an integrated circuit (IC) is also described.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle ? with respect to the short axis of the nanomagnet.

Abstract: A method to adaptively and dynamically set a bias scheme of a crossbar array for a write operation includes: performing a read-before-write operation to determine a number of cells n to be written during a write operation; comparing n to a predetermined threshold value to determine an efficient bias scheme; setting at least one voltage regulator to provide a bias voltage according to the efficient bias scheme; and performing the write operation. A method to determine threshold value to determine an efficient bias scheme of a crossbar array and an energy efficient crossbar array device are also described.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. The heavy-metal nanostrip includes at least a first layer including a heavy metal and a second layer which includes a different heavy-metal. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis, the ferromagnetic nanomagnet having both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet having a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of the flow of electrical charge through the heavy-metal nanostrip includes an angle ? with respect to the short axis of the nanomagnet.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy Hkz and an in-plane anisotropy Hkx and the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle ? with respect to the short axis of the nanomagnet.

Abstract: An energy efficient rapid single flux quantum (ERSFQ) logic register wheel includes a circular shift register having a plurality of destructive read out (DRO) cells. Each entry of the circular shift register includes a data block, a tag, and a valid bit. A compare and control logic is coupled to the circular shift register to compare a source specifier or a destination register specifier against a register tag stored in the wheel following each cycle of the register wheel. At least one or more read ports and at least one or more write ports are coupled to the circular shift register to write to or to read from a different entry each in the register wheel following each cycle of the register wheel. A RSFQ clearable FIFO with flushing and a crosspoint memory topology for integrating MRAM devices with ERSFQ circuits are also described.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.

Abstract: An energy efficient rapid single flux quantum (ERSFQ) logic register wheel includes a circular shift register having a plurality of destructive read out (DRO) cells. Each entry of the circular shift register includes a data block, a tag, and a valid bit. A compare and control logic is coupled to the circular shift register to compare a source specifier or a destination register specifier against a register tag stored in the wheel following each cycle of the register wheel. At least one or more read ports and at least one or more write ports are coupled to the circular shift register to write to or to read from a different entry each in the register wheel following each cycle of the register wheel. A RSFQ clearable FIFO with flushing and a crosspoint memory topology for integrating MRAM devices with ERSFQ circuits are also described.

Abstract: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.

Abstract: A heterogeneous power distribution system for an integrated circuit includes a power network-on-chip that receives electrical power from one or more off-chip power converters. The power network-on-chip includes a mesh of power routers to power a plurality of on-chip loads. The mesh of power routers includes a plurality of integrated simple routers and a plurality of integrated complex power routers. Each complex power router of the plurality of complex power routers includes a microcontroller which is communicatively coupled to one or more switches and one or more sensors of the complex power router. The microcontroller is configured to run a process algorithm that dynamically routes and controls power according to a power delivery policy by controlling the one or more switches based on information received from the one or more sensors. A method to determine a near optimal distribution of power supply resources in a heterogeneous power delivery system is also described.

Abstract: A heterogeneous power distribution system for an integrated circuit includes a power network-on-chip that receives electrical power from one or more off-chip power converters. The power network-on-chip includes a mesh of power routers to power a plurality of on-chip loads. The mesh of power routers includes a plurality of integrated simple routers and a plurality of integrated complex power routers. Each complex power router of the plurality of complex power routers includes a microcontroller which is communicatively coupled to one or more switches and one or more sensors of the complex power router. The microcontroller is configured to run a process algorithm that dynamically routes and controls power according to a power delivery policy by controlling the one or more switches based on information received from the one or more sensors. A method to determine a near optimal distribution of power supply resources in a heterogeneous power delivery system is also described.

Abstract: The present invention provides a digitally controlled, current starved, pulse width modulator (PWM). In the PWM of the present invention, the amount of current from the voltage source to the ring oscillator is controlled by the proposed header circuit. By changing the header current, the pulse width of the switching signal generated at the output of the ring oscillator is dynamically controlled, where the duty cycle can vary between 50% and 90%. A duty cycle to voltage converter is used to ensure the accuracy of the system under process, voltage, and temperature (PVT) variations. The proposed pulse width modulator is appropriate for dynamic voltage scaling systems due to the small on-chip area and high accuracy under process, voltage, and temperature variations.