Abstract: Method for a deterministic selection of a sensor from a plurality of sensors, having a control unit and multiple sensors connected to the control unit by means of a three-wire bus, wherein the sensors are connected parallel to one another at a three-wire bus by at least two lines and a protocol frame according to SENT specification is used between the control unit and the sensors for a data exchange, and within the protocol frame a specified sensor is selected from a plurality of sensors by means of a selection signal sent by the control unit, wherein each sensor is associated with an unambiguous number of pulses for the selection of the sensor, and the selection of the sensor is performed by means of the selection signal having a predetermined number of pulses occurring immediately in succession.

Abstract: Method for a deterministic selection of a sensor from a plurality of sensors, having a control unit and multiple sensors connected to the control unit by means of a three-wire bus, wherein the sensors are connected parallel to one another at a three-wire bus by at least two lines and a protocol frame according to SENT specification is used between the control unit and the sensors for a data exchange, and within the protocol frame a specified sensor is selected from a plurality of sensors by means of a selection signal sent by the control unit, wherein each sensor is associated with an unambiguous number of pulses for the selection of the sensor, and the selection of the sensor is performed by means of the selection signal having a predetermined number of pulses occurring immediately in succession.

Abstract: To protect against electrostatic discharges in monolithic integrated circuits in CMOS technology, a lateral thyristor structure is presented which has a much lower firing voltage compared to conventional thyristor structures.

Abstract: An electrostatic discharge (ESD) protective structure is configured and arranged to protect an integrated semiconductor circuit that is located between a first potential bus with a first supply potential and a second potential bus with a second supply potential. The ESD protective structure includes a laterally shaped ESD diode having a first region with a first conduction type and a second region of a second conduction type spaced apart from the first region. The ESD protective structure is located between the potential busses and is provided with a gate electrode, such that the first region and the second region are adjusted with respect to the gate electrode, and the spacing between the first region and the second region corresponds to the length of the gate electrode.

Abstract: To protect against electrostatic discharges in monolithic integrated circuits in CMOS technology, a lateral thyristor structure is presented which has a much lower firing voltage compared to conventional thyristor structures.

Abstract: A device for attaching the boom to different diameter masts includes a lever attached to a locking pin, which is received in a number of slots to enable circumferential adjustment.