Abstract: The present invention is directed towards a method for determining deformation parameters that a patterned device would undergo to minimize dimensional variations between a recorded pattern thereon and a reference pattern, the method including, inter alia, comparing spatial variation between features of the recorded pattern with respect to corresponding features of the reference pattern; and determining deformation forces to apply to the patterned device to attenuate the dimensional variations, with the forces having predetermined constraints, wherein a summation of a magnitude of the forces is substantially zero and a summation of moment of the forces is substantially zero.

Abstract: One embodiment of the present invention is a method for generating patterned features on a substrate that includes: (a) forming a first layer on at least a portion of a surface of the substrate, the first layer comprising at least one layer of a first material, which one layer abuts the surface of the substrate; (b) forming a second layer of a second material on at least a portion of the first layer, which second layer is imprinted with the patterned features; (c) removing at least portions of the second layer to extend the patterned features to the first layer; and (d) removing at least portions of the first layer to extend the patterned features to the substrate; wherein the first layer and the second layer may be exposed to an etching process that undercuts the patterned features, and the first material may be lifted-off.