Abstract: Several embodiments of the present technology are described with reference to a semiconductor apparatus. In some embodiments of the present technology, a semiconductor apparatus includes a stack of semiconductor dies attached to a thermal transfer structure. The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls to support the thermal transfer structure.

Abstract: Several embodiments of the present technology are described with reference to a semiconductor apparatus. In some embodiments of the present technology, a semiconductor apparatus includes a stack of semiconductor dies attached to a thermal transfer structure. The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls to support the thermal transfer structure.

Abstract: Several embodiments of the present technology are described with reference to a semiconductor die assembly and processes for manufacturing the assembly. In some embodiments of the present technology, a semiconductor die assembly includes a stack of semiconductor dies attached to a thermal transfer structure (also known as a “heat spreader,” “lid,” or “thermal lid”). The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls fabricated with molding material to support the thermal transfer structure.

Abstract: Several embodiments of the present technology are described with reference to a semiconductor die assembly and processes for manufacturing the assembly. In some embodiments of the present technology, a semiconductor die assembly includes a stack of semiconductor dies attached to a thermal transfer structure (also known as a “heat spreader,” “lid,” or “thermal lid”). The thermal transfer structure conducts heat away from the stack of semiconductor dies. Additionally, the assembly can include molded walls fabricated with molding material to support the thermal transfer structure.

Abstract: Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.

Abstract: Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.

Abstract: Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.

Abstract: Methods of forming microelectronic device wafers include fabricating a plurality of semiconductor dies at an active side of a semiconductor wafer, depositing a mask on the semiconductor wafer, removing a central portion of the mask and the semiconductor wafer, and etching. The semiconductor wafer has an outer perimeter edge and a backside that is spaced from the active side by a first thickness. The mask is deposited on the backside of the semiconductor wafer and has a face that is spaced from the backside by a mask thickness. The thinned portion has a thinned surface that is spaced from the active side by a second thickness that is less than the first thickness, and the thinned surface is etched.

Abstract: A plurality of lead frames is supplied in a lead frame-by-lead frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device to each lead frame with the adhesive by holding the device in place to cure for a preselected period of time of about one second. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A method for attaching a workpiece, for example a semiconductor die, to a workpiece holder, for example a lead frame die support, comprises the steps of interposing an uncured adhesive between the semiconductor die and the die support and preheating the adhesive from an ambient temperature to a preheat temperature of between about 150° C. and about 160° C. over a period of about 1.5 seconds. Next, the preheat temperature is maintained for about 1.5 seconds, then the adhesive is further heated to a temperature of between about 190° C. and about 200° C. over a period of about 1.0 second. The inventive method quickly cures the adhesive to secure the die to the support with acceptably low levels of voiding. An apparatus which may be adapted to perform the inventive method is further described.

Abstract: A method for attaching a workpiece, for example a semiconductor die, to a workpiece holder, for example a lead frame die support, comprises the steps of interposing an uncured adhesive between the semiconductor die and the die support and preheating the adhesive from an ambient temperature to a preheat temperature of between about 150° C. and about 160° C. over a period of about 1.5 seconds. Next, the preheat temperature is maintained for about 1.5 seconds, then the adhesive is further heated to a temperature of between about 190° C. and about 200° C. over a period of about 1.0 second. The inventive method quickly cures the adhesive to secure the die to the support with acceptably low levels of voiding. An apparatus which can be adapted to perform the inventive method is further described.

Abstract: A plurality of lead frames is supplied in a lead frame-by-lead frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device to each lead frame with the adhesive by holding the device in place to cure for a preselected period of time of about one second. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A plurality of lead frames is supplied in a lead frame-by-lead frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device to each lead frame with the adhesive by holding the device in place to cure for a preselected period of time of about one second. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A plurality of lead frames is supplied in lead frame by lead frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device to each lead frame with the adhesive by holding the device in place to cure for a preselected period of time of about one second. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A plurality of lead frames is supplied in a lead frame-by-frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a semiconductor device to each lead frame with the adhesive by holding the semiconductor device in place to cure for a preselected period of time of about one second. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A method for attaching a workpiece, for example a semiconductor die, to a workpiece holder, for example a lead frame die support, comprises the steps of interposing an uncured adhesive between the semiconductor die and the die support and preheating the adhesive from an ambient temperature to a preheat temperature of between about 150° C. and about 160° C. over a period of about 1.5 seconds. Next, the preheat temperature is maintained for about 1.5 seconds, then the adhesive is further heated to a temperature of between about 190° C. and about 200° C. over a period of about 1.0 second. The inventive method quickly cures the adhesive to secure the die to the support with acceptably low levels of voiding. An apparatus which can be adapted to perform the inventive method is further described.

Abstract: A method for attaching a workpiece, for example a semiconductor die, to a workpiece holder, for example a lead frame die support, comprises the steps of interposing an uncured adhesive between the semiconductor die and the die support and preheating the adhesive from an ambient temperature to a preheat temperature of between about 150° C. and about 160° C. over a period of about 1.5 seconds. Next, the preheat temperature is maintained for about 1.5 seconds, then the adhesive is further heated to a temperature of between about 190° C. and about 200° C. over a period of about 1.0 second. The inventive method quickly cures the adhesive to secure the die to the support with acceptably low levels of voiding. An apparatus which can be adapted to perform the inventive method is further described.

Abstract: A plurality of lead frames is supplied in frame by frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device and holds it in place to cure for a preselected period of time of about one second to each device site with adhesive. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.

Abstract: A method for attaching a semiconductor die to a leadframe is provided. Also provided are an improved semiconductor package, and a system for performing the method. The method includes applying an instant curing adhesive, such as a cyanoacrylate monomer or anaerobic adhesive, to the leadframe or die, and then polymerizing the adhesive at room temperature and ambient atmosphere, to form a cured adhesive layer between the die and lead frame. A catalyst can be applied to the leadframe, to the die or to the adhesive, to initiate polymerization. In addition, fillers can be added to the adhesive to improve various electrical and physical characteristics of the resultant adhesive layer. The system includes a dispensing mechanism for dispensing the instant curing adhesive on the leadframe or die, and a die attach mechanism for positioning and placing the die in contact with the dispensed adhesive.

Abstract: A plurality of lead frames is supplied in frame by frame sequence. A curable adhesive, preferably a 505 Epoxy, is applied to one surface of each lead frame as it indexes through an application device. An attaching device attaches a device and holds it during in place to cure for a preselected period of time of about one second to each device site with adhesive. Later, the lead frames have their edges trimmed and then are separated into separate lead frames.