Patents by Inventor Ed Burke

Ed Burke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MIM capacitors and methods for fabricating same
    Patent number: 6919233
    Abstract: Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
    Type: Grant
    Filed: December 31, 2002
    Date of Patent: July 19, 2005
    Assignee: Texas Instruments Incorporated
    Inventors: Satyavolu S. Papa Rao, Asad M. Haider, Kelly Taylor, Ed Burke
  • MIM capacitors and methods for fabricating same
    Patent number: 6803641
    Abstract: Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
    Type: Grant
    Filed: August 11, 2003
    Date of Patent: October 12, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Satyavolu S. Papa Rao, Asad M. Haider, Kelly Taylor, Ed Burke
  • MIM capacitors and methods for fabricating same
    Publication number: 20040124496
    Abstract: Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
    Type: Application
    Filed: August 11, 2003
    Publication date: July 1, 2004
    Inventors: Satyavolu S. Papa Rao, Asad M. Haider, Kelly Taylor, Ed Burke
  • MIM capacitors and methods for fabricating same
    Publication number: 20040126981
    Abstract: Semiconductor devices and methods for making the same are described in which a single high k or ferroelectric dielectric layer is used to form decoupling capacitors and analog capacitor segments. Analog capacitors are formed by coupling analog capacitor segments in series with one another, wherein the capacitor segments may be connected in reverse polarity relationship to provide symmetrical performance characteristics for the analog capacitors.
    Type: Application
    Filed: December 31, 2002
    Publication date: July 1, 2004
    Inventors: Satyavolu S. Papa Rao, Asad M. Haider, Kelly Taylor, Ed Burke