Patents by Inventor Ed C. Lee
Ed C. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7625692Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: GrantFiled: November 8, 2006Date of Patent: December 1, 2009Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 7255975Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: GrantFiled: September 16, 2003Date of Patent: August 14, 2007Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 7208262Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: GrantFiled: December 7, 2004Date of Patent: April 24, 2007Assignee: ASML Holdings N.V.Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 6955720Abstract: An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support surface coated with a coating material. A vacuum supply line is coupled to the rotatable chuck.Type: GrantFiled: June 4, 2001Date of Patent: October 18, 2005Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Richard Savage
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Patent number: 6911091Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: GrantFiled: June 3, 2002Date of Patent: June 28, 2005Assignee: ASML Netherlands B.V.Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Scott C. Wackerman, Reese Reynolds
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Patent number: 6905547Abstract: An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.Type: GrantFiled: June 17, 2002Date of Patent: June 14, 2005Assignee: Genus, Inc.Inventors: Ana R. Londergan, Thomas E. Seidel, Lawrence D. Matthysse, Ed C. Lee
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Patent number: 6844027Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: GrantFiled: May 2, 2000Date of Patent: January 18, 2005Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Scott C. Wackerman, Reese Reynolds
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Patent number: 6780461Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: GrantFiled: March 1, 2001Date of Patent: August 24, 2004Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Scott C. Wackerman, Reese Reynolds
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Publication number: 20040062876Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: ApplicationFiled: September 16, 2003Publication date: April 1, 2004Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 6669779Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: GrantFiled: March 5, 2001Date of Patent: December 30, 2003Assignee: ASML Holding N.V.Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Publication number: 20030190427Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: ApplicationFiled: March 1, 2001Publication date: October 9, 2003Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John Lewellen, Scott Wackerman, Reese Reynolds
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Publication number: 20030010289Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber.Type: ApplicationFiled: June 3, 2002Publication date: January 16, 2003Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Scott C. Wackerman, Reese Reynolds
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Publication number: 20020187442Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: ApplicationFiled: March 5, 2001Publication date: December 12, 2002Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 6468586Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: GrantFiled: May 8, 2000Date of Patent: October 22, 2002Assignee: Silicon Valley Group, Inc.Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Scott C. Wackerman, Reese Reynolds
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Publication number: 20010044217Abstract: An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support surface coated with a coating material. A vacuum supply line is coupled to the rotatable chuck.Type: ApplicationFiled: June 4, 2001Publication date: November 22, 2001Inventors: Emir Gurer, Ed C. Lee, Richard Savage
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Patent number: 6254936Abstract: Systems and methods are described for environmental exchange control for a polymer on a wafer surface. An apparatus for controlling an exchange between an environment and a polymer on a surface of a wafer located in the environment includes: a chamber adapted to hold the wafer, define the environment, and maintain the polymer in an adjacent relationship with the environment; and a heater coupled to the chamber. A method for improving performance of a spin-on material includes: forming the spin-on material on a surface of a wafer; then locating the spin-on material in an environment so that said environment is adjacent said spin-on material; and then controlling an exchange between the spin-on material and said environment. The systems and methods provide advantages because inappropriate deprotection is mitigated by careful control of the environmental temperature and environmental species partial pressures (e.g. relative humidity).Type: GrantFiled: December 29, 1998Date of Patent: July 3, 2001Assignee: Silicon Valley Group, Inc.Inventors: Emir Gurer, Ed C. Lee, Tom Zhong, Kevin Golden, John W. Lewellen, Reese Reynolds, Scott C. Wackerman
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Patent number: 6248171Abstract: Systems and methods are described for improved yield and line width performance for liquid polymers and other materials. A method for minimizing precipitation of developing reactant by lowering a sudden change in pH includes: developing at least a portion of a polymer layer on a substrate with an initial charge of a developer fluid; then rinsing the polymer with an additional charge of the developer fluid so as to controllably minimize a subsequent sudden change in pH; and then rinsing the polymer with a charge of another fluid. An apparatus for minimizing fluid impingement force on a polymer layer to be developed on a substrate includes: a nozzle including: a developer manifold adapted to supply a developer fluid; a plurality of developer fluid conduits coupled to the developer manifold; a rinse manifold adapted to supply a rinse fluid; and a plurality of rinse fluid conduits coupled to the developer manifold.Type: GrantFiled: December 28, 1998Date of Patent: June 19, 2001Assignee: Silicon Valley Group, Inc.Inventors: Emir Gurer, Ed C. Lee, Murthy Krishna, Reese Reynolds, John Salois, Royal Cherry
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Patent number: 6242364Abstract: An apparatus for delivering a fluidic media to a wafer includes a housing defining a process chamber. A fluidic media delivery member is coupled to the process chamber. A rotatable chuck is positioned in the process chamber. The rotatable chuck has a wafer support surface coated with a coating material. A vacuum supply line is coupled to the rotatable chuck.Type: GrantFiled: March 23, 1999Date of Patent: June 5, 2001Assignee: Silicon Valley Group, Inc.Inventors: Emir Gurer, Ed C. Lee, Richard Savage
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Patent number: 4566026Abstract: Disclosed is a bimetal layer located between two portions of an integrated circuit, the bimetal layer comprising a layer of TiWN and a layer of TiN.Type: GrantFiled: April 25, 1984Date of Patent: January 21, 1986Assignee: Honeywell Inc.Inventors: Ed C. Lee, Jon A. Roberts