Patents by Inventor Ed Spall

Ed Spall has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Programmable resistance memory
    Patent number: 8908413
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: August 24, 2011
    Date of Patent: December 9, 2014
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable Resistance Memory
    Publication number: 20110305075
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: August 24, 2011
    Publication date: December 15, 2011
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Patent number: 8009455
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Grant
    Filed: January 20, 2009
    Date of Patent: August 30, 2011
    Assignee: Ovonyx, Inc.
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Programmable resistance memory
    Publication number: 20100182825
    Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.
    Type: Application
    Filed: January 20, 2009
    Publication date: July 22, 2010
    Inventors: Tyler Lowrey, Carl Schell, Wally Czubatyj, Steve Hudgens, Jon Maimon, Jeff Fournier, Mike Hennessey, Ed Spall
  • Method for manufacturing Chalcogenide devices
    Publication number: 20090298222
    Abstract: A method of chalcogenide device formation includes treatment of the surface upon which the chalcogenide material is deposited. The treatment reduces or eliminates native oxides and other contaminants from the surface, thereby increasing the adhesion of the chalcogenide layer to the treated surface, eliminating voids between the chalcogenide layer and deposition surface and reducing the degradation of chalcogenide material due to the migration of contaminants into the chalcogenide.
    Type: Application
    Filed: May 28, 2008
    Publication date: December 3, 2009
    Inventors: Tyler Lowrey, Jeff Fournier, Robert Nuss, Carl Schell, Guy Wicker, Jim Ricker, James Reed, Ed Spall, Sergey Kostylev, Wolodymyr Czubatyj, Regino Sandoval
  • Liquid phase deposition of contacts in programmable resistance and switching devices
    Patent number: 7566643
    Abstract: A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.
    Type: Grant
    Filed: July 23, 2007
    Date of Patent: July 28, 2009
    Assignee: Ovonyx, Inc.
    Inventors: Wolodymyr Czubatyi, Tyler Lowrey, Ed Spall
  • Liquid phase deposition of contacts in programmable resistance and switching devices
    Publication number: 20090029534
    Abstract: A programmable resistance, chalcogenide, switching or phase-change material device includes a substrate with a plurality of stacked layers including a conducting bottom composite electrode layer, an insulative layer having an opening formed therein, an active material layer deposited over both the insulative layer and the bottom composite electrode, and a top electrode layer deposited over the active material layer. The device uses a chemical or electrochemical liquid phase deposition process to selectively and conformally fill the insulative layer opening with the conductive bottom composite electrode layer. Conformally filling the conductive material within the opening reduces structural irregularities within the opening thereby increasing material density and resistivity within the device and thereby improving device performance and reducing programming current.
    Type: Application
    Filed: July 23, 2007
    Publication date: January 29, 2009
    Inventors: Wolodymyr Czubatyi, Tyler Lowrey, Ed Spall