Abstract: Wayline generation using a worked edge may be provided. A field boundary line and first work implement width may be received. A first wayline may then be calculated according to a distance from the field boundary line comprising the width of the first work implement. The first wayline may be provided to another machine and a width of the other machine's work implement may be received. A second wayline may then be calculated according to a distance from the first wayline comprising the width of the second machine's work implement.

Abstract: A laser system and processing method exploits the absorption contrast between the materials from which a film and an underlying substrate (26) are made to effectively remove the film from the substrate. Laser output in a wavelength range of 1.2 to 3 .mu.m optimizes the absorption contrast between many resistive or conductive film materials (e.g., metals, metal alloys, polysilicon, polycides, or disilicides) and integrated circuit substrates (e.g., silicon, gallium arsenide, or other semi-conductors) and permits the use of laser output in a wider range of energy or power levels and pulse widths, without risking damage to the substrates or adjacent circuit structures. Existing film processing laser systems can be readily modified to operate in the 1.2 to 3 .mu.m range.