Abstract: A method is directed to forming a barrier layer, particularly suitable for use in a copper fabrication process. A substrate is provided. A conductive structure layer may have already been formed on the substrate. An inter-metal dielectric layer is formed over the substrate. The inter-metal dielectric layer is then patterned to form an opening that exposes the substrate. An oxygen getter layer is formed over the inter-metal dielectric layer and the opening. A barrier layer is formed on the oxygen getterlayer. A copper layer is deposited over the barrier layer. An oxidation of the oxygen getter layer is occurred in the subsequent high temperature steps. An oxide layer, serving as another barrier layer, is formed thereon. The oxygen getter layer includes any metal which can easily react with oxygen, such as titanium or tantalum.

Abstract: The proposed invention is used to prevent the bridging issue of salicide process and also to provide a self-aligned contacted process in conventional self-aligned silicide process.

Abstract: A fabrication method for a salicide gate is described, wherein the method comprising forming a gate structure on a substrate. The gate structure comprises a polysilicon gate and a selective-deposition dummy layer formed on the polysilicon gate. Source/drain regions are then formed on both sides of the gate structure in the substrate. After this, a dielectric layer is selectively deposited on the substrate, wherein the dielectric layer on the source/drain regions is thicker than the dielectric layer on the anti-reflection layer. A portion of the dielectric layer is removed until the anti-reflection layer is exposed. The anti-reflection layer is subsequently removed, followed by forming a salicide layer on the polysilicon gate to complete the manufacturing of a salicide gate.

Abstract: The proposed invention is a salicide process that is used to avoid bridge phenomena.

Abstract: A method for using CMP processes in the salicide process for preventing bridging.