Patents by Inventor Eddic Acosta

Eddic Acosta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7993971
    Abstract: A method for forming a semiconductor structure includes forming a first contact pad on a first die, wherein the first contact pad comprises a first metal element, forming a metal over the first contact pad, wherein the metal comprises a second metal element, and the second metal element is different from the first metal element. The method further includes rapidly reflowing a portion of the metal to form a thin intermetallic layer. The method further includes attaching the first contact pad of the first die to a second contact pad of a second die, wherein attaching comprises heating the first contact pad and the second contact pad to reflow the metal to form an intermetallic layer such that substantially all of the metal formed over the first contact pad is used as part of the intermetallic layer.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: August 9, 2011
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Ritwik Chatterjee, Eddic Acosta, Varughese Mathew
  • Publication number: 20090170246
    Abstract: A method for forming a semiconductor structure includes forming a first contact pad on a first die, wherein the first contact pad comprises a first metal element, forming a metal over the first contact pad, wherein the metal comprises a second metal element, and the second metal element is different from the first metal element. The method further includes rapidly reflowing a portion of the metal to form a thin intermetallic layer. The method further includes attaching the first contact pad of the first die to a second contact pad of a second die, wherein attaching comprises heating the first contact pad and the second contact pad to reflow the metal to form an intermetallic layer such that substantially all of the metal formed over the first contact pad is used as part of the intermetallic layer.
    Type: Application
    Filed: December 28, 2007
    Publication date: July 2, 2009
    Inventors: Ritwik Chatterjee, Eddic Acosta, Varughese Mathew